RSS feeds
РусскийEnglish
Issue 12, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

1974

 / 

June

←  →

Reviews of topical problems


Density of states and interband absorption of light in strongly doped semiconductors


The electronic properties of strongly doped semiconductors (SDP) differ greatly from the properties of pure semiconductors, to which many monographs and text books have been devoted. A serious study of SDP was started about 10 years ago. The quasiclassical method, its results, and the region of applicability are discussed in detail. It is shown that this method cannot be used to describe deeplylying fluctuation levels. This is followed by the recently developed method of optimal fluctuation, which makes it possible to find the argument of the exponential of the density of states deep in the forbidden band. Using this method, the density of states is analyzed at different relations between the semiconductor parameters and at all values of the energy for which the effective-mass method is applicable. The difference between the spectra of the majority and minority carriers is indicated. The influence exerted on the state density by the correlation in the impurity distribution is considered. A study of the structure of the fluctuation levels makes it possible to construct the theory of the interband light absorption coefficient (ILAC) at frequencies below the threshold. It is shown that the frequency dependence of the ILAC does not always duplicate the dependence of the density of states on the energy. An analysis of the experimental data indicates that the minority carriers play an important role in the formation of the ``tail of the ILAC''.

Fulltext pdf (816 KB)
Fulltext is also available at DOI: 10.1070/PU1974v016n06ABEH004090
PACS: 71.20.Nr, 78.20.Ci, 71.18.+y (all)
DOI: 10.1070/PU1974v016n06ABEH004090
URL: https://ufn.ru/en/articles/1974/6/c/
Citation: Efros A L "Density of states and interband absorption of light in strongly doped semiconductors" Sov. Phys. Usp. 16 789–805 (1974)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Эфрос А Л «Плотность состояний и межзонное поглощение света в сильно легированных полупроводниках» УФН 111 451–482 (1973); DOI: 10.3367/UFNr.0111.197311c.0451

Cited by (54) ↓ Similar articles (20)

  1. Ghamsari M S Luminescent Ceramics (2025) p. 3
  2. Masri M, K B G et al Colloids And Surfaces A: Physicochemical And Engineering Aspects 687 133387 (2024)
  3. Bordun O M, Bordun B O et al J Appl Spectrosc 88 1152 (2022)
  4. Bordun O M, Bordun B O et al J Appl Spectrosc 88 257 (2021)
  5. Bordun O M, Bordun I O et al Ž. Prikl. Spektrosk. (Minsk) 88 881 (2021)
  6. Spaans E M, de Wild J et al 130 (12) (2021)
  7. Bresolin B-M, Park Yu, Bahnemann D Catalysts 10 709 (2020)
  8. Schenk A, Sant S 128 (1) (2020)
  9. Teixeira J P, Salomé P M P et al Phys. Rev. Applied 11 (5) (2019)
  10. Sant S, Schenk A 122 (13) (2017)
  11. Lang M, Zimmermann Ch et al Phys. Rev. B 95 (15) (2017)
  12. Lang M, Zimmermann Ch et al 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), (2015) p. 1
  13. Yi Su-in, Yu Ch 117 (3) (2015)
  14. Caram Ju R, Zheng H et al J. Phys. Chem. Lett. 5 196 (2014)
  15. Bagraev N T, Klyachkin L E et al Semiconductors 46 275 (2012)
  16. Krishna M Proc Math Sci 120 351 (2010)
  17. Altermatt P P, Schenk A, Heiser G 100 (11) (2006)
  18. Dolidze N D, Tsekvava B E Phys. Solid State 44 2034 (2002)
  19. Malevich V L, Utkin I A Semiconductors 34 924 (2000)
  20. Gribkovskii V P Luminescence of Solids Chapter 1 (1998) p. 1
  21. Baimbetov F B, Dzhumamukhambetov N G Semiconductors 32 1187 (1998)
  22. Lush G B, Melloch M R et al 74 4694 (1993)
  23. Van Mieghem P Rev. Mod. Phys. 64 755 (1992)
  24. Bolboshenko V Z, Djouadi D et al Phys. Stat. Sol. (a) 133 121 (1992)
  25. Van Mieghem P, Borghs G, Mertens R Phys. Rev. B 44 12822 (1991)
  26. Jain S C, Mertens R P, Van Overstraeten R J Advances In Electronics And Electron Physics Vol. Advances in Electronics and Electron Physics Volume 82Bandgap Narrowing and Its Effects on the Properties of Moderately and Heavily Doped Germanium and Silicon82 (1991) p. 197
  27. Dobbelaere W, De Boeck J et al 69 2536 (1991)
  28. Belyaev A E, Demidenko Z A, Shevchenko N V Infrared Physics 31 271 (1991)
  29. Arnaudov B G, Domanevskii D S et al Semicond. Sci. Technol. 5 620 (1990)
  30. Arbuzov Yu D, Evdokimov V M, Kolenkin M Yu Soviet Physics Journal 31 25 (1988)
  31. Lebedev Ya D, Shagalov M D Phys. Stat. Sol. (a) 97 539 (1986)
  32. Ghazali A, Serre J Solid-State Electronics 28 145 (1985)
  33. Kane E O Solid-State Electronics 28 3 (1985)
  34. Oganova I G, Aliev I M Physica Status Solidi (b) 132 (1) (1985)
  35. Sritrakool W, Sa-yakanit V, Glyde H R Phys. Rev. B 32 1090 (1985)
  36. Shapira Y, Ridgley D H et al Solid State Communications 54 593 (1985)
  37. Semikolenova N A Soviet Physics Journal 27 394 (1984)
  38. Lai Sh T, Klein M V Phys. Rev. B 29 3217 (1984)
  39. Shklovskii B I, Efros A L Springer Series In Solid-State Sciences Vol. Electronic Properties of Doped SemiconductorsThe Density-of-States Tail and Interband Light Absorption45 Chapter 12 (1984) p. 268
  40. Pearsall T P, Eaves L, Portal J C 54 1037 (1983)
  41. Pastur L A J Stat Phys 27 119 (1982)
  42. Sizov F F, Teterkin V V J Appl Spectrosc 36 226 (1982)
  43. Serre J, Ghazali A, Hugon P L Phys. Rev. B 23 1971 (1981)
  44. Sa-yakanit V, Glyde H R Phys. Rev. B 22 6222 (1980)
  45. Problems of Linear Electron (Polaron) Transport Theory in Semiconductors (1979) p. 925
  46. Yanchev I Y, Arnaudov B G, Evtimova S K J. Phys. C: Solid State Phys. 12 L765 (1979)
  47. Demchuk K M, Tsidilkovskii I M Physica Status Solidi (b) 82 59 (1977)
  48. Ipatova I P, Subashiev A V Statistical Mechanics and Statistical Methods in Theory and Application Chapter 18 (1977) p. 413
  49. Rentzsch R, Berger H Thin Solid Films 37 235 (1976)
  50. Lifshits I M, Gredeskul S A, Pastur L A 2 533 (1976)
  51. Bezák V, Banský J Physica Status Solidi (b) 76 569 (1976)
  52. Gredeskul S A, Pastur L A 1 135 (1975)
  53. Berezin A A, Golikova O A et al Journal Of Non-Crystalline Solids 16 237 (1974)
  54. Nagaev E L, Grigin A P Physica Status Solidi (b) 65 457 (1974)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions