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Density of states and interband absorption of light in strongly doped semiconductors

PACS: 71.20.Nr, 78.20.Ci, 71.18.+y (all)
DOI: 10.1070/PU1974v016n06ABEH004090
URL: https://ufn.ru/en/articles/1974/6/c/
Citation: Efros A L "Density of states and interband absorption of light in strongly doped semiconductors" Sov. Phys. Usp. 16 789–805 (1974)
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Оригинал: Эфрос А Л «Плотность состояний и межзонное поглощение света в сильно легированных полупроводниках» УФН 111 451–482 (1973); DOI: 10.3367/UFNr.0111.197311c.0451

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