Recombination Radiation in Certain Broad Band Semiconductors under the Influence of a Beam of Fast Electrons

PACS: 61.80.Fe, 61.82.Fk (all)
DOI: 10.1070/PU1970v012n06ABEH003996
URL: https://ufn.ru/en/articles/1970/6/j/
Citation: Abdullaev G B, Antonov V B, Nani R Kh, Salaev E Yu, Mekhtiev T É "Recombination Radiation in Certain Broad Band Semiconductors under the Influence of a Beam of Fast Electrons" Sov. Phys. Usp. 12 795–796 (1970)

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RT Journal
T1 Recombination Radiation in Certain Broad Band Semiconductors under the Influence of a Beam of Fast Electrons
A1 Abdullaev,G.B.
A1 Antonov,V.B.
A1 Nani,R.Kh.
A1 Salaev,E.Yu.
A1 Mekhtiev,T.É.
PB Physics-Uspekhi
PY 1970
FD 10 Jun, 1970
JF Physics-Uspekhi
JO Phys. Usp.
VO 12
IS 6
SP 795-796
DO 10.1070/PU1970v012n06ABEH003996
LK https://ufn.ru/en/articles/1970/6/j/

Оригинал: Абдуллаев Г Б, Антонов В Б, Нани Р Х, Салаев Э Ю, Мехтиев Т Э «Рекомбинационное излучение в некоторых широкозонных полупроводниках под действием пучка быстрых электронов» УФН 99 509–509 (1969); DOI: 10.3367/UFNr.0099.196911j.0509