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Recombination Radiation in Certain Broad Band Semiconductors under the Influence of a Beam of Fast Electrons

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Fulltext is also available at DOI: 10.1070/PU1970v012n06ABEH003996
PACS: 61.80.Fe, 61.82.Fk (all)
DOI: 10.1070/PU1970v012n06ABEH003996
URL: https://ufn.ru/en/articles/1970/6/j/
Citation: Abdullaev G B, Antonov V B, Nani R Kh, Salaev E Yu, Mekhtiev T É "Recombination Radiation in Certain Broad Band Semiconductors under the Influence of a Beam of Fast Electrons" Sov. Phys. Usp. 12 795–796 (1970)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Recombination Radiation in Certain Broad Band Semiconductors under the Influence of a Beam of Fast Electrons
AU Abdullaev, G. B.
AU Antonov, V. B.
AU Nani, R. Kh.
AU Salaev, E. Yu.
AU Mekhtiev, T. É.
PB Physics-Uspekhi
PY 1970
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 12
IS 6
SP 795-796
UR https://ufn.ru/en/articles/1970/6/j/
ER https://doi.org/10.1070/PU1970v012n06ABEH003996

Оригинал: Абдуллаев Г Б, Антонов В Б, Нани Р Х, Салаев Э Ю, Мехтиев Т Э «Рекомбинационное излучение в некоторых широкозонных полупроводниках под действием пучка быстрых электронов» УФН 99 509–509 (1969); DOI: 10.3367/UFNr.0099.196911j.0509

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