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Нобелевские лекции по физике


История изобретения эффективных синих светодиодов на основе InGaN


University of California, Santa Barbara, CA, USA

Нобелевская лекция по физике, Стокгольм, 8 декабря 2014 г.

Текст pdf (849 Кб)
PACS: 42.72.Bj, 81.10.−h, 85.60.Dw (все)
DOI: 10.3367/UFNr.2014.12.037747
URL: https://ufn.ru/ru/articles/2016/5/g/
Цитата: Накамура Ш "История изобретения эффективных синих светодиодов на основе InGaN" УФН 186 524–536 (2016)
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Поступила: 2 декабря 2015, 8 декабря 2014

English citation: Nakamura Sh “Background story of the invention of efficient blue InGaN light emitting diodes” Phys. Usp. 59 (5) (2016)

Список литературы (49) ↓ Статьи, ссылающиеся на эту (2) Похожие статьи (20)

  1. Nakamura S, Mukai T, Senoh M "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" Appl. Phys. Lett. 64 1687 (1994)
  2. Nakamura S, Pearton S, Fasol G The Blue Laser Diode. The Complete Story 2nd ed. (Berlin: Springer, 2000) p. 230
  3. Pimputkar S, Speck J S, DenBaars S P, Nakamura S "Prospects for LED lighting" Nature Photon. 3 180 (2009)
  4. Energy Savings Forecast of Solid-State LightingGeneral Illumination Applications, DOE Report, August 2014, http://apps1.eere.energy.gov/buildings/publications/pdfs/ssl/energysavingsfore-cast14.pdf
  5. Ohkawa K "Blue LEDs: Helping to save Earth" AAPPS Bull. 24 (6) 11 (2014)
  6. Amano H, Sawaki N, Akasaki I, Toyoda Y "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer" Appl. Phys. Lett. 48 353 (1986)
  7. Nakamura S, Harada Y, Seno M "Novel metalorganic chemical vapor deposition system for GaN growth" Appl. Phys. Lett. 58 2021 (1991)
  8. Amano H, Akasaki I, Hiramatsu K, Koide N, Sawaki N "Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate" Thin Solid Films 163 415 (1988)
  9. Nakamura S "GaN growth using GaN buffer layer" Jpn. J. Appl. Phys. 30 L1705 (1991)
  10. Amano H, Kito M, Hiramatsu K, Akasaki I "p-Type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)" Jpn. J. Appl. Phys. 28 L2112 (1989)
  11. Nakamura S, Iwasa N, Senoh M, Mukai T "Hole compensation mechanism of p-type GaN films" Jpn. J. Appl. Phys. 31 1258 (1992)
  12. Neugebauer J, Van de Walle C G "Hydrogen in GaN: Novel aspects of a common impurity" Phys. Rev. Lett. 75 4452 (1995)
  13. Nakamura S, Mukai T, Senoh M, Iwasa N "Thermal annealing effects on p-type Mg-doped GaN films" Jpn. J. Appl. Phys. 31 L139 (1992)
  14. Nakamura S, Mukai T, Senoh M "High-power GaN p-n junction blue-light-emitting diodes" Jpn. J. Appl. Phys. 30 L1998 (1991)
  15. "MIS type blue LEDs with a brightness of 200 mcd were developed by Toyoda Gosei" October 20, 1993, Nikkan Kogyo Shinbun, Japanese Newspaper Press Release
  16. Kumakura K, Makimoto T, Kobayashi N, Hashizume T, Fukui T, Hasegawa H "Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence" Appl. Phys. Lett. 86 052105 (2005)
  17. Osamura K, Nakajima K, Murakami Y, Shingu P H, Ohtsuji A "Fundamental absorption edge in GaN, InN and their alloys" Solid State Commun. 11 617 (1972)
  18. Osamura K, Naka S, Murakami Y "Preparation and optical properties of Ga1-xInxN thin films" J. Appl. Phys. 46 3432 (1975)
  19. Nagatomo T, Kuboyama T, Minamino H, Omoto O "Properties of Ga1-xInxN films prepared by MOVPE" Jpn. J. Appl. Phys. 28 L1334 (1989)
  20. Yoshimoto N, Matsuoka T, Sasaki T, Katsui A "Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy" Appl. Phys. Lett. 59 2251 (1991)
  21. Nakamura S, Mukai T "High-quality InGaN films grown on GaN films" Jpn. J. Appl. Phys. 31 L1457 (1992)
  22. Nakamura S, Senoh M, Mukai T "p-GaN/n-InGaN/n-GaN double-heterostructure blue-light-emitting diodes" Jpn. J. Appl. Phys. 32 L8 (1993)
  23. Nakamura S, Mukai T, Senoh M "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" Appl. Phys. Lett. 64 1687 (1994)
  24. "p - n junction DH Blue LEDs with a brightness of more than 1000mcd were developed by Nichia Chemical Industries Ltd." November 30th, 1993, Nikkei Sangyo Shinbun, Japanese News-paper Press Release
  25. Nakamura S, Senoh M, Iwasa N, Nagahama S-I "High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures" Jpn. J. Appl. Phys. 34 L797 (1995)
  26. Nakamura S, Senoh M, Iwasa N, Nagahama S -I, Yamada T, Mukai T "Superbright green InGaN single-quantum-well-structure light-emitting diodes" Jpn. J. Appl. Phys. 34 L1332 (1995)
  27. Bando K, Noguchi Y, Sakamoto K, Shimizu Y "Development and application of high-brightness white LEDs" Technical Digest. Phosphor Research Society, 264th Meeting, November 29, 1996, in Japanese
  28. Nakamura D, Senoh M, Nagahama S-I, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y "InGaN-based multi-quantum-well-structure laser diodes" Jpn. J. Appl. Phys. 35 L74 (1996)
  29. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y, Kiyoku H "Room temperature continuous-wave operation of InGaN multi-quantum well structure laser diodes" Appl. Phys. Lett. 69 4056 (1996)
  30. Lester S D, Ponce F A, Craford M G, Steigerwald D A "High dislocation densities in high efficiency GaN-based light-emitting diodes" Appl. Phys. Lett. 66 1249 (1995)
  31. Chichibu S, Azuhata T, Sota T, Nakamura S "Spontaneous emission of localized excitons in InGaN single and multiquantum well structures" Appl. Phys. Lett. 69 4188 (1996)
  32. Nakamura S "The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes" Science 281 956 (1998)
  33. Browne D A, Mazumder B, Wu Y-R, Speck J S "Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy" J. Appl. Phys. 117 185703 (2015)
  34. Stringfellow G B, Craford M G "High brightness light-emitting diodes" Semicond. Semimet. 48 47 (1997)
  35. Wolff G A, Hebert R A, Broder J D "Electroluminescence of GaP" Phys. Rev. 100 1144 (1955)
  36. Holt D A, Alfrey G F, Wiggins C S "Grain boundaries and electroluminescence in gallium phosphide" Nature 181 109 (1958)
  37. Grimmeiss H G, Koelmans H "Analysis of p-n luminescence in Zn-doped GaP" Phys. Rev. 123 1939 (1961)
  38. Starkiewicz J, Allen J W "Injection electroluminescence at p-n junctions in zinc-doped gallium phosphide" J. Phys. Chem. Solids 23 881 (1962)
  39. Gershenzon M, Mikulyak R M "Electroluminescence at p-n junctions in gallium phosphide" J. Appl. Phys. 32 1338 (1961)
  40. Cree First to Break 300 Lumens-Per-Watt Barrier, March 26, 2014, Cree Inc., Press Release, http://www.cree.com/News-and-Events/Cree-News/Press-Releases/2014/ March/300LPW-LED-barrier
  41. Maruska H P, Tieljen J J "The preparation and properties of vapor-deposited single-crystal-line GaN" Appl. Phys. Lett. 15 327 (1969)
  42. Maruska H P, Stevenson D A, Pankove J I "Violet luminescence of Mg-doped GaN" Appl. Phys. Lett. 22 303 (1973)
  43. Yoshida S, Misawa S, Gonda S "Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN- coated sapphire substrates" Appl. Phys. Lett. 42 427 (1983)
  44. Lei T, Fanciulli M, Molnar R J, Moustakas T D, Graham R J, Scanlon J "Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon" Appl. Phys. Lett. 59 944 (1991)
  45. Nakamura S, Mukai T, Senoh M "In situ monitoring and Hall measurements of GaN grown with GaN buffer layers" J. Appl. Phys. 71 5543 (1992)
  46. Nakamura S, Krames M R "History of gallium-nitride-based light-emitting diodes for illumination" Proc. IEEE 101 2211 (2013)
  47. Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A, Krames M R "Auger recombination in InGaN measured by photoluminescence" Appl. Phys. Lett. 91 141101 (2007)
  48. Iveland J, Martinelli L, Peretti J, Speck J S, Weisbuch C "Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: Identification of the dominant mechanism for efficiency droop" Phys. Rev. Lett. 110 177406 (2013)
  49. Pourhashemi A, Farrell R M, Hardy M T, Hsu P S, Kelchner K M, Speck J S, DenBaars S P, Nakamura S "Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (2021) GaN substrates" Appl. Phys. Lett. 103 151112 (2013)
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