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Нобелевские лекции по физике


Увлекательные приключения в поисках синего света

 а, б
а Meijo University, 1-501 Shiogama-guchi, Nagoya, Tempaku-ku, 468-8502, Japan
б Nagoya University Akasaki Research Center, Furo-cho, Nagoya, Chikusa-ku, 464-8601, Japan

Нобелевская лекция по физике, Стокгольм, 8 декабря, 2014

Текст pdf (996 Кб)
PACS: 42.72.Bj, 81.10.−h, 85.60.Dw (все)
DOI: 10.3367/UFNr.2014.12.037725
URL: https://ufn.ru/ru/articles/2016/5/e/
Цитата: Акасаки И "Увлекательные приключения в поисках синего света" УФН 186 504–517 (2016)
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Поступила: 2 декабря 2015, 8 декабря 2014

English citation: Akasaki I “Fascinated journeys into blue light” Phys. Usp. 59 (5) (2016)

Список литературы (67) ↓ Похожие статьи (20)

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  22. Akasaki I, Amano H, Koide Y, Hiramatsu K, Sawaki N "Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1-xAlxN (0 < x ≤ 0.4) films grown on sapphire substrate by MOVPE" J. Cryst. Growth 98 209 (1989)
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  30. Amano H, Kitoh M, Hiramatsu K, Akasaki I "Growth and luminescence properties of Mg-doped GaN prepared by MOVPE" J. Electrochem. Soc. 137 1639 (1990)
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  38. Yamasaki S, Asami S, Shibata N, Koike M, Manabe K, Tanaka T, Amano H, Akasaki I "p-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy" Appl. Phys. Lett. 66 1112 (1995)
  39. Murakami H, Asahi T, Amano H, Hiramatsu K, Sawaki N, Akasaki I "Growth of Si-doped AlxGa1-xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy" J. Cryst. Growth 115 648 (1991)
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  47. Amano H, Akasaki I "Fabrication and properties of GaN-based quantum well structure for short wavelength light emitter" Extended Abstract, Intern. Conf. Solid State Devices and Materials. V-7 (1995) p. 683
  48. Yamada M, Mitani T, Narukawa Y, Shioji S, Niki I, Sonobe S, Deguchi K, Sano M, Mukai T "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode" Jpn. J. Appl. Phys. 41 L1431 (2002)
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  52. Akasaki I, Amano H "MOVPE growth of high quality AlxGa1 − xN/GayIn1 − yN (x ≥ 0, y ≤ 1) heterostructure for short wavelength light emitter" MRS Symp. Proc. 339 443 (1994)
  53. Akasaki I, Amano H, Suemune I IOP Conf. Ser. 142 7 (1996)
  54. Takeuchi T, Sota S, Katsuragawa M, Komori M, Takeuchi H, Amano H, Akasaki I "Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells" Jpn. J. Appl. Phys. 36 L382 (1997)
  55. Takeuchi T, Wetzel C, Yamaguchi S, Sakai H, Amano H, Akasaki I "Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect" Appl. Phys. Lett. 73 1691 (1998)
  56. Akasaki I, Amano H, Sota S, Sakai H, Tanaka T, Koike M "Stimulated emission by current injection from an AlGaN/GaN/GaInN quantum well device" Jpn. J. Appl. Phys. 34 L1517 (1995)
  57. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y "InGaN-based multi-quantum well-structure laser diodes" Jpn. J. Appl. Phys. 35 L74 (1996)
  58. Akasaki I, Sota S, Sakai H, Tanaka T, Koike M, Amano H "Shortest wave-length semiconductor laser diode" Electron. Lett. 32 1105 (1996)
  59. Iida K, Kawashima T, Miyazaki A, Kasugai H, Mishima S, Honshio A, Miyake Y, Iwaya M, Amano H, Akasaki I "350.9 nm UV laser diode grown on low-dislocation-density AlGaN" Jpn. J. Appl. Phys. 43 L499 (2004)
  60. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y, Kiyoku H "Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes" Appl. Phys. Lett. 69 4056 (1996)
  61. Pernot C, Hirano A, Iwaya M, Detchprohm T, Amano H, Akasaki I "Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes" Jpn. J. Appl. Phys. 39 L387 (2000)
  62. Fujii T, Tsuyukuchi N, Iwaya M, Kamiyama S, Amano H, Akasaki I "High on/off ratio in enhancement-mode AlxGa1 − xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact" Jpn. J. Appl. Phys. 45 L1048 (2006)
  63. Itoh K, Kawamoto T, Amano H, Hiramatsu K, Akasaki I "Metalorganic vapor phase epitaxial growth and properties of GaN/Al0.1Ga0.9N layered structures" Jpn. J. Appl. Phys. 30 1924 (1991)
  64. Takeuchi T, Amano H, Akasaki I "Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells" Jpn. J. Appl. Phys. 39 413 (2000)
  65. Yamamoto S, Zhao Y, Pan C C, Chung R B, Fujito K, Sonoda J, DenBaars S P, Nakamura S "High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (2021) GaN substrates" Appl. Phys. Exp. 3 122102 (2010)
  66. Zhao Y, Tanaka S, Pan C-C, Fujito K, Feezell D, Speck J S, DenBaars S P, Nakamura S "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2" Appl. Phys. Express 4 082104 (2011)
  67. Takagi S, Enya Y, Kyono T, Adachi M, Yoshizumi Y, Sumitomo T, Yamanaka Y, Kumano T, Tokuyama S, Sumiyoshi K, Saga N, Ueno M, Katayama K, Ikegami T, Nakamura T, Yanashima K, Nakajima H, Tasai K, Naganuma K, Fuutagawa N, Takiguchi Y, Hamaguchi T, Ikeda M "High-power (over 100 mW) green laser diodes on semipolar 2021 GaN substrates operating at wavelengths beyond 530 nm" Appl. Phys. Express 5 082102 (2012)
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