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Issue 11, 2024
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PACS numbers

85.60.−q Optoelectronic devices
  1. P.V. Ratnikov, A.P. Silin “Two-dimensional graphene electronics: current status and prospects” Phys. Usp. 61 1139–1174 (2018)
    68.65.Cd, 68.65.Pq, 73.21.Fg, 73.40.Gk, 73.50.−h, 85.30.Tv, 85.40.−e, 85.60.−q, 85.65.+h (all)
  2. “Modern problems in the physical sciences (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 16 November 2011)” Phys. Usp. 55 607–632 (2012)
    01.10.Fv, 06.60.Jn, 07.07.Hj, 14.60.Pq, 29.40.Gx, 29.50.+v, 74.25.Ha, 74.25.Op, 74.50.+r, 74.72.−h, 74.72.Hs, 85.60.−q (all)
  3. M.Ya. Schelev “Pico-femto-attosecond photoelectronics: looking through the lens of half a century” Phys. Usp. 55 607–614 (2012)
    06.60.Jn, 07.07.Hj, 85.60.−q (all)
  4. “120th anniversary of the birth of Sergei Ivanovich Vavilov (Scientific session of the Physical Sciences Division of the Russian Academy of Sciences, 30 March 2011)” Phys. Usp. 54 1257–1283 (2011)
    01.10.Fv, 01.65.+g, 01.70.+w, 03.30.+p, 41.60.−m, 42.50.−p, 42.65.−k, 42.70.−a, 78.47.−p, 78.55.−m, 85.60.−q (all)
  5. A.G. Vitukhnovsky “Advances in light sources and displays” Phys. Usp. 54 1268–1272 (2011)
    01.65.+g, 78.55.−m, 85.60.−q (all)
  6. Z.F. Krasil’nik, A.V. Novikov “Optical properties of strained Si1-xGex and Si1-x-yGexCy heterostructures” Phys. Usp. 43 295–298 (2000)
    79.60.Jv, 85.30.Vw, 85.60.−q (all)
  7. O.P. Zaskal’ko “Picosecond electronics and optoelectronics” Sov. Phys. Usp. 30 350–350 (1987)
    01.30.Vv, 01.30.Ee, 85.60.−q, 85.30.−z, 81.15.Gh, 81.15.Hi (all)
  8. L.N. Kurbatov “Photoelectric Solid-State Receivers and New Methods of Optical-Radiation Reception” Sov. Phys. Usp. 15 835–837 (1973)
    85.60.−q, 84.40.Ua, 42.79.Sz (all)
  9. A.I. Kartashev, I.Sh. Etsin “Methods of Measuring Small Phase Difference Changes in Interference Devices” Sov. Phys. Usp. 15 232–250 (1972)
    07.60.Ly, 06.30.Bp, 85.60.−q (all)
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