Gennadii Mikhailovich Gusev



Universidade de São Paulo, Instituto de Física
Address: São Paulo, Brazil
Phone: +55 (11) 3814 0503
Fax: +55 (11) 3814 0503
Website:

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Phone: +7 (383) 333 27 66
Fax: +7 (383) 333 27 71
Website:


Accepted articles

  1. G.M. Gusev, Z.D. Kvon, A.D. Levin et alThermopower in HgTe-based topological insulators and two-dimensional semimetalsPhys. Usp., accepted

Articles

Citations

2 Z.D. Kvon, D.A. Kozlov, E.B. Olshanetsky et alTopological insulators based on HgTePhys. Usp. 63 629–647 (2020) 25
3 Z.D. Kvon, E.B. Olshanetskii, G.M. Gusev et alCoulomb-like mesoscopic conductance fluctuations in a 2D electron gas near the filling factor ν = 1/2Phys. Usp. 41 164–166 (1998)

25
G.M. Gusev: total citation number of the papers published in Phys. Usp.

See also: Z.D. Kvon, E.B. Olshanetskii, N.N. Mikhailov, S.A. Dvoretskii, D.A. Kozlov, J.C. Portal, D.K. Maude, A.D. Levin

PACS: 73.43.Qt, 73.63.Hs, 05.45.+b, 73.40.Gk

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