Evgeny Borisovich Olshanetskii



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Novosibirsk State Technical University
Address: pr. K. Marksa 20, Novosibirsk, 630092, Russian Federation
Phone: +7 (3832) 46 50 01
Fax: +7 (3832) 46 02 09, +7 (3832) 4
Website:


Articles

Citations

1 G.M. Gusev, Z.D. Kvon, A.D. Levin et alThermopower in HgTe-based topological insulators and two-dimensional semimetalsPhys. Usp. 69 (1) (2026)
2 Z.D. Kvon, D.A. Kozlov, E.B. Olshanetsky et alTopological insulators based on HgTePhys. Usp. 63 629–647 (2020) 27
3 V.M. Pudalov, S.V. Iordanskii, A. Kashuba et alJoint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)Phys. Usp. 49 203–208 (2006) 1
4 E.B. Olshanetskii, V. Renard, Z.D. Kvon et alInteraction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctionsPhys. Usp. 49 211–216 (2006) 1
5 Z.D. Kvon, E.B. Olshanetskii, G.M. Gusev et alCoulomb-like mesoscopic conductance fluctuations in a 2D electron gas near the filling factor ν = 1/2Phys. Usp. 41 164–166 (1998)

29
E.B. Olshanetskii: total citation number of the papers published in Phys. Usp.

See also: Z.D. Kvon, G.M. Gusev, N.N. Mikhailov, A.I. Toropov, V. Renard, I.V. Gornyi, J.C. Portal, V.L. Ginzburg, V.M. Pudalov, Yu.A. Izyumov, J.C. Portal, D.K. Maude, S.V. Iordanskii, A.V. Gurevich, G.A. Askar’yan

PACS: 72.15.Jf, 72.20.Pa, 85.35.Be, 73.43.Qt, 73.63.Hs, 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn, 05.45.+b, 73.40.Gk

© 1918–2026 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions