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Issue 12, 2025
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Evgeny Borisovich Olshanetskii



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Novosibirsk State University
Address: ul. Pirogova 2, Novosibirsk, 630090, Russian Federation
Phone: +7 (3832) 30 32 44
Fax: +7 (3832) 39 71 01
Website:


Accepted articles

  1. G.M. Gusev, Z.D. Kvon, A.D. Levin et al “Thermopower in HgTe-based topological insulators and two-dimensional semimetals” Phys. Usp., accepted

Articles

Citations
2 Z.D. Kvon, D.A. Kozlov, E.B. Olshanetsky et al “Topological insulators based on HgTe” Phys. Usp. 63 629–647 (2020) 25
3 V.M. Pudalov, S.V. Iordanskii, A. Kashuba et al “Joint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)” Phys. Usp. 49 203–208 (2006) 1
4 E.B. Olshanetskii, V. Renard, Z.D. Kvon et al “Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions” Phys. Usp. 49 211–216 (2006) 1
5 Z.D. Kvon, E.B. Olshanetskii, G.M. Gusev et al “Coulomb-like mesoscopic conductance fluctuations in a 2D electron gas near the filling factor ν = 1/2” Phys. Usp. 41 164–166 (1998)

27
E.B. Olshanetskii: total citation number of the papers published in Phys. Usp.

See also: Z.D. Kvon, G.M. Gusev, A.I. Toropov, N.N. Mikhailov, J.C. Portal, V. Renard, I.V. Gornyi, V.L. Ginzburg, V.M. Pudalov, D.A. Kozlov, D.K. Maude, J.C. Portal, Yu.A. Izyumov, S.A. Dvoretskii, A. Kashuba

PACS: 73.43.Qt, 73.63.Hs, 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn, 05.45.+b, 73.40.Gk
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