Boris A. Volkov



Lebedev Physical Institute, Russian Academy of Sciences
Address: Leninsky prosp. 53, Moscow, 119991, Russian Federation
Phone: +7 (499) 135 42 64
Fax: +7 (499) 135 78 80
Website:


Articles

  1. B.A. Volkov “Electronic properties of narrow gap IV-VI semiconductorsPhys. Usp. 46 984–986 (2003)
  2. B.A. Volkov, L.I. Ryabova, D.R. Khokhlov “Mixed-valence impurities in lead telluride-based solid solutionsPhys. Usp. 45 819–846 (2002)
  3. B.A. Volkov, B.G. Idlis, M.Sh. Usmanov “Interface states in inhomogeneous semiconductor structuresPhys. Usp. 38 761–771 (1995)
  4. B.A. Volkov “Semiconductor encyclopedia—once againSov. Phys. Usp. 31 384–384 (1988)
  5. B.A. Volkov “Encyclopedia of semiconductorsSov. Phys. Usp. 30 195–195 (1987)
  6. B.A. Volkov, O.A. Pankratov “Electronic structure of quasicubic crystals: energy bands, dielectric properties, and defects in narrow-gap semiconductors.Sov. Phys. Usp. 29 575–577 (1986)
  7. B.A. Volkov, O.A. Pankratov “Inverted contact in semiconductors—a new inhomogeneous structure with a twodimensional gas of zero-mass electronsSov. Phys. Usp. 29 579–581 (1986)
  8. B.A. Volkov, A.A. Gorbatsevich, Yu.V. Kopaev “Anomalous diamagnetic properties of systems with spontaneous currentSov. Phys. Usp. 27 464–465 (1984)

Signed personalia

  1. B.A. Volkov, A.V. Gurevich, V.L. Ginzburg et alLeonid Veniaminovich Keldysh (on his seventieth birthday)Phys. Usp. 44 415–416 (2001)

See also: V.L. Ginzburg, A.F. Andreev, L.V. Keldysh, G.A. Mesyats, A.N. Skrinskii, L.P. Pitaevskii, A.S. Borovik-Romanov, A.M. Prokhorov, E.P. Velikhov, E.L. Feinberg, B.B. Kadomtsev, V.A. Rubakov, V.A. Matveev, Zh.I. Alferov, Yu.V. Kopaev

PACS: 71.20.Nr, 01.30.Kj, 61.66.Fn, 75.50.Ee, 75.30.Cr, 75.20.Ck, 73.21.Fg, 71.55.Ht, 77.22.-d, 71.23.Ft, 01.30.Vv, 61.72.Vv, 72.20.-i, 73.20.-r, 61.72.Tt

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