A.A. Shklyaev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

Quantum-Phase Electronics Center, Department of Applied Physics, The University of Tokyo and Japan Science and Technology Agency, CREST
Address: 7-3-1 Hongo, Tokyo, 113-8656, Japan

Articles

A.A. Shklyaev, M. Ichikawa “Extremely dense arrays of germanium and silicon nanostructures” Phys. Usp. 51 133–161 (2008)
A.A. Shklyaev, M. Ichikawa “Fabrication of germanium and silicon nanostructures using a scanning tunneling microscope” Phys. Usp. 49 887–903 (2006)