Latyshev A V



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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation


Articles

Citations

1 Latyshev A V, Aseev A L “Monatomic steps on silicon surfacesPhys. Usp. 41 1015–1023 (1998) 19

Signed personalia

  1. Betelin V B, Garnov Sergei V, Gorbatsevich Aleksandr A et alAleksandr Sergeevich Sigov (on his 80th birthday)Phys. Usp. 68 631–633 (2025)
  2. Bagaev S N, Garnov Sergei V, Deev Sergei Mikhailovich et alYurii Nikolaevich Kul'chin (on his 70th birthday)Phys. Usp. 66 320–321 (2023)
  3. Balega Yurii Yu, Zherebtsov G A, Kul’chin Yurii N et alSergei Nikolaevich Bagaev (on his 80th birthday)Phys. Usp. 64 1063–1064 (2021)
  4. Aseev A L, Bugaev Aleksandr Stepanovich, Velikhov Evgenii Pavlovich et alIn memory of Vladislav Ivanovich PustovoitPhys. Usp. 64 852–853 (2021)
  5. Gavrilinko V I, Gaponov Sergei Viktorovich, Denisov Grigory Gennad’evich et alZakharii Fishelevich Krasilnik (on his 70th birthday)Phys. Usp. 61 111–112 (2018)

19
Latyshev A V: total citation number of the papers published in Phys. Usp.

See also: Andreev Aleksandr F, Ginzburg Vitalii Lazarevich, Keldysh Leonid Veniaminovich, Skrinskii Aleksandr Nikolaevich, Mesyats Gennadii A, Pitaevskii Lev Petrovich, Matveev Viktor A, Velikhov Evgenii Pavlovich, Prokhorov A M, Rubakov Valerii A, Kadomtsev Boris B, Borovik-Romanov A S, Alferov Zhores Ivanovich, Feinberg Evgenii L, Fortov Vladimir E

PACS: 01.60.+q, 68.35.p, 68.55.a, 81.15.Hi

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