A.V. Latyshev



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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation


Articles

  1. A.V. Latyshev, A.L. Aseev “Monatomic steps on silicon surfaces41 1015–1023 (1998)

Signed personalia

  1. Yu.Yu. Balega, G.A. Zherebtsov, Yu.N. Kul’chin et alSergei Nikolaevich Bagaev (on his 80th birthday)64 1063–1064 (2021)
  2. A.L. Aseev, A.S. Bugaev, E.P. Velikhov et alIn memory of Vladislav Ivanovich Pustovoit64 852–853 (2021)
  3. V.I. Gavrilinko, S.V. Gaponov, G.G. Denisov et alZakharii Fishelevich Krasilnik (on his 70th birthday)61 111–112 (2018)

See also: A.F. Andreev, V.L. Ginzburg, L.V. Keldysh, A.N. Skrinskii, G.A. Mesyats, L.P. Pitaevskii, E.P. Velikhov, A.M. Prokhorov, B.B. Kadomtsev, A.S. Borovik-Romanov, Zh.I. Alferov, V.A. Matveev, E.L. Feinberg, V.E. Fortov, V.A. Rubakov

PACS: 01.60.+q, 68.35.p, 68.55.a, 81.15.Hi

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