Monatomic steps on silicon surfaces
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
The results of studies of monatomic steps on silicon surfaces using in situ ultrahigh vacuum reflection electron microscopy are reviewed. The topics covered include the increase in dynamic step edge stiffness under non-equilibrium conditions; step bunch and step antibunch formation processes; electromigration effects; the anomalously high density of Si(111) adatoms; and incipient epitaxial growth.