A.V. Latyshev



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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation


Articles

  1. A.V. Latyshev, A.L. Aseev “Monatomic steps on silicon surfacesPhys. Usp. 41 1015–1023 (1998)

Signed personalia

  1. S.N. Bagaev, S.V. Garnov, S.M. Deev et alYurii Nikolaevich Kul'chin (on his 70th birthday)Phys. Usp. 66 320–321 (2023)
  2. Yu.Yu. Balega, G.A. Zherebtsov, Yu.N. Kul’chin et alSergei Nikolaevich Bagaev (on his 80th birthday)Phys. Usp. 64 1063–1064 (2021)
  3. A.L. Aseev, A.S. Bugaev, E.P. Velikhov et alIn memory of Vladislav Ivanovich PustovoitPhys. Usp. 64 852–853 (2021)
  4. V.I. Gavrilinko, S.V. Gaponov, G.G. Denisov et alZakharii Fishelevich Krasilnik (on his 70th birthday)Phys. Usp. 61 111–112 (2018)

See also: A.F. Andreev, V.L. Ginzburg, L.V. Keldysh, G.A. Mesyats, A.N. Skrinskii, L.P. Pitaevskii, E.P. Velikhov, A.M. Prokhorov, V.A. Matveev, B.B. Kadomtsev, A.S. Borovik-Romanov, V.A. Rubakov, Zh.I. Alferov, E.L. Feinberg, V.E. Fortov

PACS: 01.60.+q, 68.35.p, 68.55.a, 81.15.Hi

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