Accepted articles

On the 55th anniversary of the Institute of Spectroscopy of the Russian Academy of Sciences


Silicon integrated photonics

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Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, bld. 1, Moscow, 121205, Russian Federation

Technologies of silicon integrated photonics are the basis for the fabrication of a class of devices, such as optical modulators, photodetectors, optical filters and switches, multiplexers and demultiplexers, optical transceivers, etc. In many respects, silicon integrated photonics competes with alternative platforms based on indium phosphide, silicon nitride and dioxide, and other platforms. Here we provide an overview of modern approaches used in silicon integrated photonic technologies, describe the components of photonic integrated circuits and devices developed on their basis, and make a comparison with alternative technology platforms.

Keywords: silicon, integrated photonics, nanophotonics, silicon-on-insulator, photonic integrated circuits
PACS: 42.82.−m, 42.82.Et, 84.40.Lj (all)
DOI: 10.3367/UFNe.2024.09.039762
Citation: Kosolobov S S, Pshenichnyuk I A, Taziev K R, Zemtsova A K, Zemtsov D S, Smirnov A S, Zhigunov D M, Drachev V P "Silicon integrated photonics" Phys. Usp., accepted

Received: 15th, April 2024, revised: 12th, September 2024, 13th, September 2024

Оригинал: Косолобов С С, Пшеничнюк И А, Тазиев К Р, Земцова А К, Земцов Д С, Смирнов А С, Жигунов Д М, Драчев В П «Кремниевая интегральная фотоника» УФН, принята к публикации; DOI: 10.3367/UFNr.2024.09.039762

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