Accepted articles
Reviews of topical problems

Terahertz probing of topological insulators: photoelectric effects

A.V. Galeeva^a, A.S. Kazakov^a, D.R. Khokhlov^a, b
^aLomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
^bLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

The paper presents an overview of the opportunities provided by the study of photoelectric effects in 3D topological insulators and a number of other topologically nontrivial materials being excited by terahertz radiation. It is shown that in a number of cases, information about electronic states obtained using such experiments is unique.

Keywords: terahertz radiation, photoelectric effects, photogalvanic effect, photoelectromagnetic effect, photoconductivity
DOI: 10.3367/UFNe.2023.12.039610
Citation: Galeeva A V, Kazakov A S, Khokhlov D R "Terahertz probing of topological insulators: photoelectric effects" Phys. Usp., accepted

Received: 16th, October 2023, revised: 20th, November 2023, accepted: 2nd, December 2023

Оригинал: Галеева А В, Казаков А С, Хохлов Д Р «Терагерцовое зондирование топологических изоляторов: фотоэлектрические эффекты» УФН, принята к публикации; DOI: 10.3367/UFNr.2023.12.039610

Accepted articles

Terahertz probing of topological insulators: photoelectric effects