New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data
D.A. Zolotov†a,
V.E. Asadchikova,
A.V. Buzmakova,
V.V. Volkova,
I.G. D’yachkovaa,
P.V. Konareva,
V.A. Grigoreva,b,
E.V. Suvorovc aFederal Scientific Research Center "Crystallography and Photonics", Russian Academy of Sciences, Leninskii prosp 59, Moscow, 119333, Russian Federation bNational Research Nuclear University ‘MEPhI’, Kashirskoe shosse 31, Moscow, 115409, Russian Federation cOsipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
We present the results of processing the diffraction patterns of dislocation half-loops in Si(111) silicon single crystal, which were recorded by X-ray topo-tomography (XTT) at the European Synchrotron Radiation Facility (ESRF). An algorithm for preprocessing two-dimensional images by automatic noise filtering was proposed and solution reliability criteria were developed, which enabled a significant improvement in the quality of three-dimensional reconstruction of the spatial distribution of the defects under study. The experimental patterns were compared with those simulated numerically using the solution of Takagi equations. This approach made it possible not only to determine the geometry of the defects but also to derive information about the Burgers vector.
Keywords: synchrotron radiation, topo-tomography, dislocation half-loops, silicon single crystal, Takagi equations PACS:07.85.−m, 61.72.−y, 61.72.Bb (all) DOI:10.3367/UFNe.2022.05.039199 URL: https://ufn.ru/en/articles/2023/9/f/ 001112661900006 2-s2.0-85182880932 2023PhyU...66..943Z Citation: Zolotov D A, Asadchikov V E, Buzmakov A V, Volkov V V, D’yachkova I G, Konarev P V, Grigorev V A, Suvorov E V "New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data" Phys. Usp.66 943–950 (2023)
PT Journal Article
TI New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data
AU Zolotov D A
FAU Zolotov DA
AU Asadchikov V E
FAU Asadchikov VE
AU Buzmakov A V
FAU Buzmakov AV
AU Volkov V V
FAU Volkov VV
AU D’yachkova I G
FAU D’yachkova IG
AU Konarev P V
FAU Konarev PV
AU Grigorev V A
FAU Grigorev VA
AU Suvorov E V
FAU Suvorov EV
DP 10 Sep, 2023
TA Phys. Usp.
VI 66
IP 9
PG 943-950
RX 10.3367/UFNe.2022.05.039199
URL https://ufn.ru/en/articles/2023/9/f/
SO Phys. Usp. 2023 Sep 10;66(9):943-950
Received: 28th, March 2022, revised: 25th, April 2022, accepted: 28th, May 2022