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On the 100th anniversary of the Ioffe Institute of the Russian Academy of Sciences


100th anniversary of the Ioffe Institute

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Fulltext is also available at DOI: 10.3367/UFNe.2019.07.038641
DOI: 10.3367/UFNe.2019.07.038641
URL: https://ufn.ru/en/articles/2019/8/a/
2019PhyU...62..737.
Citation: "100th anniversary of the Ioffe Institute" Phys. Usp. 62 737–738 (2019)
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9th, July 2019

Оригинал: «100 лет Физико-техническому институту им. А.Ф. Иоффе РАН» УФН 189 784–784 (2019); DOI: 10.3367/UFNr.2019.07.038641

Similar articles (2) ↓

  1. P.G. Baranov, A.M. Kalashnikova et al “Spintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)” Phys. Usp. 62 795–822 (2019)
  2. A.A. Lebedev, P.A. Ivanov et al “SiC-based electronics (100th anniversary of the Ioffe Institute)” Phys. Usp. 62 754–794 (2019)

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