Hot electrons in silicon oxide

V.A. Gritsenko^a, b, c
^aRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
^bNovosibirsk State University, ul. Pirogova 2, Novosibirsk, 630090, Russian Federation
^cNovosibirsk State Technical University, pr. K. Marksa 20, Novosibirsk, 630092, Russian Federation

One particular use of amorphous silicon oxide SiO₂, a material crucial for silicon device technology and design, is as a flash memory tunnel dielectric. The breakdown field of SiO₂ exceeds 10⁷ V cm⁻¹. Strong electric fields in SiO₂ give rise to phenomena that do not occur in crystalline semiconductors. In relatively low electric fields (10⁴ — 10⁶ V cm⁻¹) the electron distribution function is determined by the scattering of electrons by longitudinal optical phonons. In high fields (in excess of 10⁶ V cm⁻¹) the distribution function is determined by electron-acoustic phonon scattering.

Keywords: silicon oxide, hot electrons, scattering, optical phonons
PACS: 72.20.Ht, 72.20.Jv, 72.80.Sk, 73.40.Sx (all)
DOI: 10.3367/UFNe.2016.12.038008
URL: https://ufn.ru/en/articles/2017/9/c/
Web of Science

000417704200003
Scopus

2-s2.0-85040973769
ADS NASA

2017PhyU...60..902G
Citation: Gritsenko V A "Hot electrons in silicon oxide" Phys. Usp. 60 902–910 (2017)

BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 2nd, September 2016, revised: 7th, December 2016, accepted: 8th, December 2016

Оригинал: Гриценко В А «Горячие электроны в оксиде кремния» УФН 187 971–979 (2017); DOI: 10.3367/UFNr.2016.12.038008

References (44) Cited by (9) Similar articles (20) ↓

V.A. Gritsenko “Structure of silicon/oxide and nitride/oxide interfaces” Phys. Usp. 52 869–877 (2009)
T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectrics” Phys. Usp. 53 561–575 (2010)
V.A. Gritsenko “Atomic structure of the amorphous nonstoichiometric silicon oxides and nitrides” Phys. Usp. 51 699–708 (2008)
F.F. Komarov “Nano- and microstructuring of solids by swift heavy ions” Phys. Usp. 60 435–471 (2017)
A.M. Zlobin, P.S. Zyryanov “Hot electrons in semiconductors subjected to quantizing magnetic fields” Sov. Phys. Usp. 14 379–393 (1972)
B.P. Zakharchenya, D.N. Mirlin et al “Spectrum and polarization of hot-electron photoluminescence in semiconductors” Sov. Phys. Usp. 25 143–166 (1982)
B.Kh. Bairamov, V.A. Voitenko, I.P. Ipatova “Light scattering from electron-density fluctuations in multivalley semiconductors and metals” Phys. Usp. 36 (5) 392–435 (1993)
A.F. Volkov, Sh.M. Kogan “Physical phenomena in semiconductors with negative differential conductivity” Sov. Phys. Usp. 11 881–903 (1969)
B.P. Antonyuk, V.B. Antonyuk “Self-organization of excitations in Ge-doped silica fibers and its role in second harmonic generation” Phys. Usp. 44 53–70 (2001)
I.V. Kukushkin, S.V. Meshkov, V.B. Timofeev “Two-dimensional electron density of states in a transverse magnetic field” Sov. Phys. Usp. 31 511–534 (1988)
S.P. Andreev “Spectra and kinetics of systems with magnetic-impurity states in a potential with finite range” Sov. Phys. Usp. 27 431–447 (1984)
G.M. Guro “Characteristic times of electronic processes in seminconductors” Sov. Phys. Usp. 3 895–911 (1961)
V.S. Vavilov “Radiative recombination in semiconductors” Sov. Phys. Usp. 2 455–464 (1959)
A.A. Balakin, G.M. Fraiman “Electron—ion collisions in strong electromagnetic fields” Phys. Usp. 60 1197–1235 (2017)
F.G. Bass, Yu.G. Gurevich “Nonlinear theory of the propagation of electromagnetic waves in a Solid-state plasma and in a Gaseous discharge” Sov. Phys. Usp. 14 113–124 (1971)
E.L. Stolyarova “Semiconductor detectors of nuclear radiation” Sov. Phys. Usp. 6 872–887 (1964)
Yu.E. Perlin “Modern methods in the theory of many-phonon processes” Sov. Phys. Usp. 6 542–565 (1964)
E.Yu. Kokorish, N.N. Sheftal’ “Dislocations in semiconductor crystals” Sov. Phys. Usp. 3 840–849 (1961)
M.V. Fok “ELECTROLUMINESCENCE” Sov. Phys. Usp. 3 832–839 (1961)
V.I. Karas’, V.I. Sokolenko “Nonequilibrium kinetics of the electron—phonon subsystem can give rise to electric- and magnetic-plasticity effects in crystals in alternating electric and/or magnetic fields” Phys. Usp. 61 1051–1071 (2018)

The list is formed automatically.