The unique quantum properties of the nitrogen-vacancy color centers (NV-centers) in diamond have motivated the search for similar color centers with enhancing properties in SiC. In this paper, experimental evidence is presented that vacancy-related spin centers in SiC not only have properties similar to those of diamond NV centers but also exhibit many additional properties, making these quantum systems promising for many applications in spintronics, sensorics, and quantum information processing at ambient conditions.
Keywords: spin centers, silicon vacancy-related centres, optical polarization of electron spins, magnetic resonance PACS:76.30.−v, 78.47.−p, 85.75.−d (all) DOI:10.3367/UFNe.2016.02.037755 URL: https://ufn.ru/en/articles/2016/6/k/ Citation: Soltamov V A, Baranov P G "Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide" Phys. Usp.59 605–610 (2016)
TI Radio spectroscopy of the optically aligned spin states of color centers in silicon carbide
AU Soltamov, V. A.
AU Baranov, P. G.
JA Phys. Usp.
Received: 7th, March 2016, accepted: 4th, February 2016