Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation
PACS:42.72.Bj, 81.10.−h, 85.60.Dw (all) URL: https://ufn.ru/en/articles/2016/5/l/ Citation: Amano H "Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation" Phys. Usp.59 (5) (2016)
Received: 2nd, December 2015, accepted: 8th, December 2014