Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation

PACS: 42.72.Bj, 81.10.−h, 85.60.Dw (all)
URL: https://ufn.ru/en/articles/2016/5/l/
Citation: Amano H "Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation" Phys. Usp. 59 (5) (2016)

Received: 2nd, December 2015, accepted: 8th, December 2014

Оригинал: Амано Х «Выращивание кристалла GaN на сапфировой подложке методом низкотемпературного осаждения буферного слоя и получение кристалла GaN p-типа с помощью допирования магнием и дальнейшего облучения низкоэнергетическим электронным пучком» УФН 186 518–523 (2016); DOI: 10.3367/UFNr.2014.12.037745

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