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Plasmon effects in In(Ga)N-based nanostructures

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Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Nanoplasmonics and metamaterials (Scientific session of the Division of Physical Sciences, Russian Academy of Sciences, 27 April 2009).

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Fulltext is also available at DOI: 10.3367/UFNe.0179.200909i.1007
PACS: 36.40.Gk, 73.20.Mf, 78.67.−n (all)
DOI: 10.3367/UFNe.0179.200909i.1007
URL: https://ufn.ru/en/articles/2009/9/h/
000274047000007
2-s2.0-76349099841
2009PhyU...52..949S
Citation: Shubina T V, Ivanov S V, Toropov A A, Kop’ev P S "Plasmon effects in In(Ga)N-based nanostructures" Phys. Usp. 52 949–953 (2009)
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Оригинал: Шубина Т В, Иванов С В, Торопов А А, Копьев П С «Плазмонные эффекты в наноструктурах на основе In(Ga)N» УФН 179 1007–1012 (2009); DOI: 10.3367/UFNr.0179.200909i.1007

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  3. Mezdrogina M M, Eremenko M V et al Phys. Solid State 54 194 (2012)

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