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Plasmon effects in In(Ga)N-based nanostructures

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Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Nanoplasmonics and metamaterials (Scientific session of the Division of Physical Sciences, Russian Academy of Sciences, 27 April 2009).

Fulltext pdf (387 KB)
Fulltext is also available at DOI: 10.3367/UFNe.0179.200909i.1007
PACS: 36.40.Gk, 73.20.Mf, 78.67.−n (all)
DOI: 10.3367/UFNe.0179.200909i.1007
URL: https://ufn.ru/en/articles/2009/9/h/
000274047000007
2-s2.0-76349099841
2009PhyU...52..949S
Citation: Shubina T V, Ivanov S V, Toropov A A, Kop’ev P S "Plasmon effects in In(Ga)N-based nanostructures" Phys. Usp. 52 949–953 (2009)
BibTex BibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
%0 Journal Article
%T Plasmon effects in In(Ga)N-based nanostructures
%A T. V. Shubina
%A S. V. Ivanov
%A A. A. Toropov
%A P. S. Kop’ev
%I Physics-Uspekhi
%D 2009
%J Phys. Usp.
%V 52
%N 9
%P 949-953
%U https://ufn.ru/en/articles/2009/9/h/
%U https://doi.org/10.3367/UFNe.0179.200909i.1007

Оригинал: Шубина Т В, Иванов С В, Торопов А А, Копьев П С «Плазмонные эффекты в наноструктурах на основе In(Ga)N» УФН 179 1007–1012 (2009); DOI: 10.3367/UFNr.0179.200909i.1007

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