Plasmon effects in In(Ga)N-based nanostructures

T.V. Shubina; Sergei Viktorovich Ivanov; A.A. Toropov; Petr Sergeevich Kop’ev

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Plasmon effects in In(Ga)N-based nanostructures

T.V. Shubina, S.V. Ivanov, A.A. Toropov, P.S. Kop’ev
Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Nanoplasmonics and metamaterials (Scientific session of the Division of Physical Sciences, Russian Academy of Sciences, 27 April 2009).

PACS: 36.40.Gk, 73.20.Mf, 78.67.−n (all)
DOI: 10.3367/UFNe.0179.200909i.1007
URL: https://ufn.ru/en/articles/2009/9/h/
Web of Science

000274047000007
Scopus

2-s2.0-76349099841
ADS NASA

2009PhyU...52..949S
Citation: Shubina T V, Ivanov S V, Toropov A A, Kop’ev P S "Plasmon effects in In(Ga)N-based nanostructures" Phys. Usp. 52 949–953 (2009)

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PT Journal Article
TI Plasmon effects in In(Ga)N-based nanostructures
AU Shubina T V
FAU Shubina TV
AU Ivanov S V
FAU Ivanov SV
AU Toropov A A
FAU Toropov AA
AU Kop’ev P S
FAU Kop’ev PS
DP 10 Sep, 2009
TA Phys. Usp.
VI 52
IP 9
PG 949-953
RX 10.3367/UFNe.0179.200909i.1007
URL https://ufn.ru/en/articles/2009/9/h/
SO Phys. Usp. 2009 Sep 10;52(9):949-953

Оригинал: Шубина Т В, Иванов С В, Торопов А А, Копьев П С «Плазмонные эффекты в наноструктурах на основе In(Ga)N» УФН 179 1007–1012 (2009); DOI: 10.3367/UFNr.0179.200909i.1007