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Nano-sized structures incorporating ferromagnetic metal layers: new effects due to the passage of a perpendicular current

 a,  b,  c
a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, kor. 7, Moscow, 125009, Russian Federation
b Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 125009, Russian Federation
c Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow Region, 141190, Russian Federation

A scientific session of the Physical Sciences Division of the Russian Academy of Sciences (RAS) was held on November 28, 2007 in the conference hall of the P N Lebedev Physical Institute, RAS. The following reports were presented at the session:
(1) Gulyaev Yu V, Zil’berman P E, Epshtein E M (Institute of Radioengineering and Electronics, RAS, Moscow-Fryazino) “Nano-sized structures incorporating ferromagnetic metal layers: new effects due to the passage of a perpendicular current”;
(2) Zvezdin A K, Zvezdin K A, Khvalkovskiy A V (A M Prokhorov Institute of General Physics, RAS, Moscow) “The generalized Landau Lifshitz equation and spin transfer processes in magnetic nanostructures”.
An bridged version of these reports is given below.

Fulltext pdf (175 KB)
Fulltext is also available at DOI: 10.1070/PU2008v051n04ABEH006509
PACS: 72.25.−b, 75.75.+a, 85.75.−d (all)
DOI: 10.1070/PU2008v051n04ABEH006509
URL: https://ufn.ru/en/articles/2008/4/g/
2-s2.0-49349083709
2008PhyU...51..409G
Citation: Gulyaev Yu V, Zil’berman P E, Epshtein E M "Nano-sized structures incorporating ferromagnetic metal layers: new effects due to the passage of a perpendicular current" Phys. Usp. 51 409–412 (2008)
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Оригинал: Гуляев Ю В, Зильберман П Е, Эпштейн Э М «Наноразмерные структуры с включением ферромагнитных металлических слоев: новые эффекты при прохождении перпендикулярного тока» УФН 178 433 (2008); DOI: 10.3367/UFNr.0178.200804h.0433

References (14) ↓ Similar articles (20)

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