Colossal electroresistance and electron instability in strongly correlated electron systems
Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Region, Russian Federation
Studies of the electron instability effects (EIEs) in structures based on strongly correlated electron systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed. These effects manifest themselves in a change of several orders of magnitude in the resistive state of the normal metal-HTSC or normal metal-DM (doped manganite) interface in an electric field under significant current injection conditions. The results of studying HTSC- and doped-manganite-based heterojunctions are considered. EIEs in heterostructures are compared with the electric field effect on the properties of an SCES in thin films and gate-containing devices. The general features and distinctions in the physics of these phenomena are analyzed.