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Colossal electroresistance and electron instability in strongly correlated electron systems

Institute of Solid-State Physics, Russian Academy of Sciences, Chernogolovka, Moscow Region, Russian Federation

Studies of the electron instability effects (EIEs) in structures based on strongly correlated electron systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed. These effects manifest themselves in a change of several orders of magnitude in the resistive state of the normal metal-HTSC or normal metal-DM (doped manganite) interface in an electric field under significant current injection conditions. The results of studying HTSC- and doped-manganite-based heterojunctions are considered. EIEs in heterostructures are compared with the electric field effect on the properties of an SCES in thin films and gate-containing devices. The general features and distinctions in the physics of these phenomena are analyzed.

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 71.10.−w, 71.27.+a, 71.30.+h, 73.40.−c, 74.62.Dh (all)
DOI: 10.1070/PU2007v050n11ABEH006396
Citation: Tulina N A "Colossal electroresistance and electron instability in strongly correlated electron systems" Phys. Usp. 50 1171–1178 (2007)
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Оригинал: Тулина Н А «Колоссальное электросопротивление и электронная неустойчивость в структурах на основе сильнокоррелированных электронных систем» УФН 177 1231–1239 (2007); DOI: 10.3367/UFNr.0177.200711d.1231

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