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Colossal electroresistance and electron instability in strongly correlated electron systems

Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

Studies of the electron instability effects (EIEs) in structures based on strongly correlated electron systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed. These effects manifest themselves in a change of several orders of magnitude in the resistive state of the normal metal-HTSC or normal metal-DM (doped manganite) interface in an electric field under significant current injection conditions. The results of studying HTSC- and doped-manganite-based heterojunctions are considered. EIEs in heterostructures are compared with the electric field effect on the properties of an SCES in thin films and gate-containing devices. The general features and distinctions in the physics of these phenomena are analyzed.

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Fulltext is also available at DOI: 10.1070/PU2007v050n11ABEH006396
PACS: 71.10.−w, 71.27.+a, 71.30.+h, 73.40.−c, 74.62.Dh (all)
DOI: 10.1070/PU2007v050n11ABEH006396
Citation: Tulina N A "Colossal electroresistance and electron instability in strongly correlated electron systems" Phys. Usp. 50 1171–1178 (2007)
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Оригинал: Тулина Н А «Колоссальное электросопротивление и электронная неустойчивость в структурах на основе сильнокоррелированных электронных систем» УФН 177 1231–1239 (2007); DOI: 10.3367/UFNr.0177.200711d.1231

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