Studies of the electron instability effects (EIEs) in structures based on strongly correlated electron systems (SCESs), such as high-temperature superconductors (HTSCs) and doped manganites (compounds with colossal magnetoresistance), are reviewed. These effects manifest themselves in a change of several orders of magnitude in the resistive state of the normal metal-HTSC or normal metal-DM (doped manganite) interface in an electric field under significant current injection conditions. The results of studying HTSC- and doped-manganite-based heterojunctions are considered. EIEs in heterostructures are compared with the electric field effect on the properties of an SCES in thin films and gate-containing devices. The general features and distinctions in the physics of these phenomena are analyzed.

PACS: 71.10.−w, 71.27.+a, 71.30.+h, 73.40.−c, 74.62.Dh (all) DOI: 10.1070/PU2007v050n11ABEH006396 URL: https://ufn.ru/en/articles/2007/11/d/ 000253900700004 2-s2.0-40449123670 2007PhyU...50.1171T Citation: Tulina N A "Colossal electroresistance and electron instability in strongly correlated electron systems" Phys. Usp. 50 1171–1178 (2007) BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks Оригинал: Тулина Н А «Колоссальное электросопротивление и электронная неустойчивость в структурах на основе сильнокоррелированных электронных систем» УФН 177 1231–1239 (2007); DOI: 10.3367/UFNr.0177.200711d.1231