Issues

 / 

2006

 / 

September

  

Conferences and symposia


High-sensitivity terahertz radiation detectors based on a new class of semiconductor materials


Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation

A scientific session of the Physical Sciences Division of the Russian Academy of Sciences was held in the Conference Hall of the Lebedev Physics Institute, Russian Academy of Sciences, on 12 April 2006. The following reports were presented at the session:
(1) Khokhlov D R (Lomonosov Moscow State University) ’High-sensitivity terahertz radiation detectors based on a new class of semiconductor materials’;
(2) Mitin A V (Kazan State Technological University) ’Modulation gamma-resonance spectroscopy’;
(3) Kurochkin V E (Institute of Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg) ’Methods and tools for the express immunoassay. A new approach to solving the problem’;
(4) Lukin V P (Institute of Atmospheric Optics, Siberian Division of the Russian Academy of Sciences, Tomsk) ’Adaptive optical imaging in the atmosphere.’
A brief presentation of the reports is given below.

Fulltext pdf (434 KB)
Fulltext is also available at DOI: 10.1070/PU2006v049n09ABEH006094
DOI: 10.1070/PU2006v049n09ABEH006094
URL: https://ufn.ru/en/articles/2006/9/f/
000243785700005
2-s2.0-33846480430
2006PhyU...49..955K
Citation: Khokhlov D R "High-sensitivity terahertz radiation detectors based on a new class of semiconductor materials" Phys. Usp. 49 955–959 (2006)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI High-sensitivity terahertz radiation detectors based on a new class of semiconductor materials
AU Khokhlov, D. R.
PB Physics-Uspekhi
PY 2006
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 49
IS 9
SP 955-959
UR https://ufn.ru/en/articles/2006/9/f/
ER https://doi.org/10.1070/PU2006v049n09ABEH006094

Оригинал: Хохлов Д Р «Высокочувствительные приемники терагерцового излучения на основе нового класса полупроводниковых материалов» УФН 176 983 (2006); DOI: 10.3367/UFNr.0176.200609g.0983

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions