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Integrating magnetism into semiconductor electronics

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Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a ’common sense’, a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

Fulltext pdf (158 KB)
Fulltext is also available at DOI: 10.1070/PU2005v048n06ABEH002200
PACS: 72.25.Pn, 78.67.−n, 85.75.−d (all)
DOI: 10.1070/PU2005v048n06ABEH002200
URL: https://ufn.ru/en/articles/2005/6/f/
000232636600004
2005PhyU...48..603Z
Citation: Zakharchenya B P, Korenev V L "Integrating magnetism into semiconductor electronics" Phys. Usp. 48 603–608 (2005)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Integrating magnetism into semiconductor electronics
A1 Zakharchenya,B.P.
A1 Korenev,V.L.
PB Physics-Uspekhi
PY 2005
FD 10 Jun, 2005
JF Physics-Uspekhi
JO Phys. Usp.
VO 48
IS 6
SP 603-608
DO 10.1070/PU2005v048n06ABEH002200
LK https://ufn.ru/en/articles/2005/6/f/

Оригинал: Захарченя Б П, Коренев В Л «Интегрируя магнетизм в полупроводниковую электронику» УФН 175 629–635 (2005); DOI: 10.3367/UFNr.0175.200506d.0629

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