Integrating magnetism into semiconductor electronics

Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a ’common sense’, a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

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Fulltext is also available at DOI: 10.1070/PU2005v048n06ABEH002200
PACS: 72.25.Pn, 78.67.−n, 85.75.−d (all)
DOI: 10.1070/PU2005v048n06ABEH002200
Citation: Zakharchenya B P, Korenev V L "Integrating magnetism into semiconductor electronics" Phys. Usp. 48 603–608 (2005)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
	author = {B. P. Zakharchenya and V. L. Korenev},
	title = {Integrating magnetism into semiconductor electronics},
	publisher = {Physics-Uspekhi},
	year = {2005},
	journal = {Phys. Usp.},
	volume = {48},
	number = {6},
	pages = {603-608},
	url = {},
	doi = {10.1070/PU2005v048n06ABEH002200}

Оригинал: Захарченя Б П, Коренев В Л «Интегрируя магнетизм в полупроводниковую электронику» УФН 175 629–635 (2005); DOI: 10.3367/UFNr.0175.200506d.0629

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