The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a ’common sense’, a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

PACS: 72.25.Pn, 78.67.−n, 85.75.−d (all) DOI: 10.1070/PU2005v048n06ABEH002200 URL: https://ufn.ru/en/articles/2005/6/f/ 000232636600004 2005PhyU...48..603Z Citation: Zakharchenya B P, Korenev V L "Integrating magnetism into semiconductor electronics" Phys. Usp. 48 603–608 (2005) BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks @article{Zakharchenya:2005, author = {B. P. Zakharchenya and V. L. Korenev}, title = {Integrating magnetism into semiconductor electronics}, publisher = {Physics-Uspekhi}, year = {2005}, journal = {Phys. Usp.}, volume = {48}, number = {6}, pages = {603-608}, url = {https://ufn.ru/en/articles/2005/6/f/}, doi = {10.1070/PU2005v048n06ABEH002200} } Оригинал: Захарченя Б П, Коренев В Л «Интегрируя магнетизм в полупроводниковую электронику» УФН 175 629–635 (2005); DOI: 10.3367/UFNr.0175.200506d.0629