The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a ’common sense’, a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor—making the hybrid an electronic-write-in and electronic-read-out elementary storage unit.

PACS: 72.25.Pn, 78.67.−n, 85.75.−d (all) DOI: 10.1070/PU2005v048n06ABEH002200 URL: https://ufn.ru/en/articles/2005/6/f/ 000232636600004 2005PhyU...48..603Z Citation: Zakharchenya B P, Korenev V L "Integrating magnetism into semiconductor electronics" Phys. Usp. 48 603–608 (2005) BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks TY JOUR TI Integrating magnetism into semiconductor electronics AU Zakharchenya, B. P. AU Korenev, V. L. PB Physics-Uspekhi PY 2005 JO Physics-Uspekhi JF Physics-Uspekhi JA Phys. Usp. VL 48 IS 6 SP 603-608 UR https://ufn.ru/en/articles/2005/6/f/ ER https://doi.org/10.1070/PU2005v048n06ABEH002200 Оригинал: Захарченя Б П, Коренев В Л «Интегрируя магнетизм в полупроводниковую электронику» УФН 175 629–635 (2005); DOI: 10.3367/UFNr.0175.200506d.0629