RSS feeds
РусскийEnglish
Issue 11, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

2003

 / 

May

←  →

Reviews of topical problems


Nonequilibrium 1/f γ noise in conducting films and contacts


National Research University of Electronic Technology (MIET), sq. Shokina 1, Zelenograd, Moscow, 124498, Russian Federation

Work on nonequilibrium flicker-noise (1/f γ noise or NEFN) in conducting films of various materials and in thin-film contacts is reviewed. Experimental methods for studying nonequilibrium flicker fluctuations by separating NEFN from the total noise are suggested. Published results on NEFN in metal and alloy films, Ni/Cr-film and TaxNy-film resistors, and contacts are systematized. It is shown that various kinds of NEFN occur in conducting films. Depending on test conditions, external influences, and the film microstructure, both stationary and non-stationary NEFNs are observed. The use of 1/f γ noise measurements for nondestructively controlling the quality of thin-film conductors is substantiated. For most of the passive IC components (thin-film conductors, resistive layers, contacts), NEFN makes a much more informative quality indicator than equilibrium flicker-noise.

Fulltext pdf (525 KB)
Fulltext is also available at DOI: 10.1070/PU2003v046n05ABEH001244
PACS: 05.40.Ca, 72.70.+m, 73.50.Td, 85.40.Qx (all)
DOI: 10.1070/PU2003v046n05ABEH001244
URL: https://ufn.ru/en/articles/2003/5/a/
000185206600001
Citation: Zhigal’skii G P "Nonequilibrium 1/f γ noise in conducting films and contacts" Phys. Usp. 46 449–471 (2003)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Жигальский Г П «Неравновесный 1/f γ-шум в проводящих пленках и контактах.» УФН 173 465–490 (2003); DOI: 10.3367/UFNr.0173.200305a.0465

References (97) Cited by (36) ↓ Similar articles (13)

  1. Ivanov A M, Klochkov A V Semiconductors 57 354 (2023)
  2. Ivanov A M, Nenashev G V, Aleshin A N J Mater Sci: Mater Electron 33 21666 (2022)
  3. Zakharov Yu A, Gots S S, Bakhtizin R Z Meas Tech 64 364 (2021)
  4. Zakharov Yu A, Gots S S, Bakhtizin R Z Izmer. Tekhn. (5) 18 (2021)
  5. Loginov D S, Baskakova A V et al J. Phys.: Conf. Ser. 2103 012232 (2021)
  6. Ivanov A M Tech. Phys. 66 71 (2021)
  7. Dalcanale S, Uren M J et al IEEE Trans. Electron Devices 68 2220 (2021)
  8. Zakharov Yu A, Ghots S S, Bakhtizin R Z Radiophys Quantum El 63 227 (2020)
  9. Bondariev A, Horbatyi I et al Measurement 136 269 (2019)
  10. Kolodiy Z A, Stadnyk B I et al Aut. Control Comp. Sci. 52 311 (2018)
  11. Gorban’ I I Tech. Phys. 63 1722 (2018)
  12. Gorban I I Randomness and Hyper-randomness Mathematical Engineering Chapter 6 (2018) p. 91
  13. Gorban I I The Statistical Stability Phenomenon Mathematical Engineering Chapter 8 (2017) p. 111
  14. Chernyakov A E, Kartashova A P et al 2016 17th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), (2016) p. 1
  15. Janahmadov A Kh, Javadov M Y Synergetics and Fractals in Tribology Materials Forming, Machining And Tribology Chapter 8 (2016) p. 333
  16. Zhigal’skii G P, Kholomina T A J. Commun. Technol. Electron. 60 517 (2015)
  17. Kuzovlev Yu E Uspekhi Fizicheskikh Nauk 185 773 (2015) [Kuzovlev Yu E Phys.-Usp. 58 719 (2015)]
  18. Gerashchenko O V, Matveev V A et al Phys. Solid State 56 1438 (2014)
  19. Kolodiy A Z, Kolodiy Z A Aut. Control Comp. Sci. 48 243 (2014)
  20. Dolgin B, Belogolovskii M et al 112 (11) (2012)
  21. Zakheim A L, Levinshtein M E et al Semiconductors 46 208 (2012)
  22. Gorban I I Radioelectron.Commun.Syst. 55 99 (2012)
  23. Belogolovskii M, Jung G et al 109 (7) (2011)
  24. Budak V P, Veklenko B A Journal Of Quantitative Spectroscopy And Radiative Transfer 112 864 (2011)
  25. Zhigal’ski G P J. Commun. Technol. Electron. 55 241 (2010)
  26. Averkiev N S, Levinshtein M E et al Tech. Phys. Lett. 35 922 (2009)
  27. Kaulakys B, Alaburda M J. Stat. Mech. 2009 P02051 (2009)
  28. Kolodiy Z A, Kolodiy A Z Aut. Conrol Comp. Sci. 43 179 (2009)
  29. Gerashchenko O V Tech. Phys. Lett. 34 124 (2008)
  30. Zhigal’skii G P, Gvas’kov A A, Sitkin P O J. Commun. Technol. Electron. 52 701 (2007)
  31. Stakhovsky I R Izv., Phys. Solid Earth 43 1012 (2007)
  32. Timashev S F Russ J Electrochem 42 424 (2006)
  33. Rumyantsev S L, Levinshteĭn M E et al Phys. Solid State 48 2194 (2006)
  34. Veklenko B A J. Exp. Theor. Phys. 101 568 (2005)
  35. Vitusevich S A, Danylyuk S V et al 96 5625 (2004)
  36. Vitusevich S A, Danylyuk S V et al Applied Surface Science 238 143 (2004)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions