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Methodological notes


Chemical localization


Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation

The possibility that, in spite of high valence electron concentrations, metal-insulator transitions can in principle occur in materials composed of atoms of only metallic elements is demonstrated based on the analysis of experimental data. For such a transition to occur, stable atomic configurations forming deep potential wells capable of trapping dozens of valence electrons should appear in the system. This means, in essence, that bulk metallic medium transforms into an assembly of identical quantum dots. Depending on the parameters, such a material either does contain delocalized electrons (metal) or does not contain such electrons (insulator). The degree of dis- order is one of these parameters. Two types of substances with such properties are discussed: liquid binary alloys with both components being metallic, and thermodynamically stable quasicrystals.

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Fulltext is also available at DOI: 10.1070/PU2002v045n11ABEH001246
PACS: 71.23.−k, 71.30.+h, 72.15.Rn (all)
DOI: 10.1070/PU2002v045n11ABEH001246
URL: https://ufn.ru/en/articles/2002/11/d/
000181345500004
Citation: Gantmakher V F "Chemical localization" Phys. Usp. 45 1165–1174 (2002)
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Оригинал: Гантмахер В Ф «Химическая локализация» УФН 172 1283–1293 (2002); DOI: 10.3367/UFNr.0172.200211d.1283

References (28) ↓ Cited by (26) Similar articles (4)

  1. Anderson P W Phys. Rev. 109 1492 (1958)
  2. Mott N F Metal-Insulator Transitions 2nd ed. (London: Taylor & Francis, 1990) [Translated into Russian from the 1st ed. (Moscow: Nauka, 1979)]
  3. Edwards P P, Sienko M J Phys. Rev. B 17 2575 (1978)
  4. Mooij J H Phys. Status Solidi A 17 521 (1973)
  5. Hensel F Adv. Phys. 28 555 (1979)
  6. van der Lugt W, Geerstma W Can. J. Phys. 65 326 (1987)
  7. Schmutzler R W et al. Ber. Bunsenges. Phys. Chem. 80 107 (1976)
  8. Calaway W F, Saboungi M-L J. Phys. F: Met. Phys. 13 1213 (1983)
  9. Meijer J A, Vinke G J B, van der Lugt W J. Phys. F: Met. Phys. 16 845 (1986)
  10. Xu R, de Jonge T, van der Lugt W Phys. Rev. B 45 12788 (1992)
  11. van der Lugt W Phys. Scripta T39 372 (1991)
  12. Hoshino H, Schmutzler R W, Hensel F Phys. Lett. A 51 7 (1975)
  13. Shklovskiî B I, Efros A L Elektronnye Svoîstva Legirovannykh Poluprovodnikov (Electronic Properties of Doped Semiconductors, Moscow: Nauka, 1979) [Translated into English (Berlin: Springer-Verlag, 1984)]
  14. Lifshitz I M Usp. Fiz. Nauk 83 617 (1964) [Sov. Phys. Usp. 7 549 (1965)]
  15. Ziman J M Philos. Mag. 6 1013 (1961)
  16. Ching W Y, Huber D L Phys. Rev. B 25 1096 (1982)
  17. de Heer W A et al., in Solid State Physics Vol. 40 (Eds F Seitz, D Turnbull, New York: Academic Press, 1987) p. 93
  18. Physical Properties of Quasicrystals (Springer Series in Solid-State Sciences, Vol. 126, Ed. Z M Stadnik, Berlin: Springer, 1999)
  19. Goldman A I, Kelton R F Rev. Mod. Phys. 65 213 (1993)
  20. Janot C Phys. Rev. B 53 181 (1996)
  21. Wang C-R, Lin S-T J. Phys. Soc. Jpn 68 3988 (1999)
  22. Wang C-R, Su T-I, Lin S-T J. Phys. Soc. Jpn 69 3356 (2000)
  23. Delahaye J, Berger C Phys. Rev. B 64 094203 (2001)
  24. Altshuler B L, Aronov A G, in Electron-Electron Interactions in Disordered Systems (Modern Problems in Condensed Matter Sciences, Vol. 10, Eds A L Efros, M Pollak, Amsterdam: North-Holland, 1985) p. 1
  25. Imry Y J. Appl. Phys. 52 1817 (1981)
  26. Gantmakher V F et al. Zh. Eksp. Teor. Fiz. 103 1460 (1993) [JETP 76 714 (1993)]
  27. Wang C R et al. J. Phys. Soc. Jpn 67 2383 (1998)
  28. Abeles B et al. Adv. Phys. 24 407 (1975)
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