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Sensing of dynamic charge states using single-electron tunneling transistors

 a,  a,  b,  b,  b,  b,  b
a Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
b Physikalisch-Technische Bundesanstalt, Braunschweig, Germany
Fulltext pdf (174 KB)
Fulltext is also available at DOI: 10.1070/PU1998v041n02ABEH000365
PACS: 73.40.−c, 74.80.Fp
DOI: 10.1070/PU1998v041n02ABEH000365
URL: https://ufn.ru/en/articles/1998/2/ac/
000072729300028
Citation: Krupenin V A, Lotkhov S V, Scherer H, Zorin A B, Ahlers F-J, Niemeyer J, Wolf H "Sensing of dynamic charge states using single-electron tunneling transistors" Phys. Usp. 41 204–206 (1998)
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Оригинал: Крупенин В А, Лотхов С В, Шерер Х, Зорин А Б, Алерс Ф Й, Нимайер Й, Вольф Х «Зондирование динамических зарядовых состояний с помощью одноэлектронных туннельных транзисторов» УФН 168 219–222 (1998); DOI: 10.3367/UFNr.0168.199802ac.0219

References (7) Similar articles (20) ↓

  1. E.S. Soldatov, V.V. Khanin et alRoom temperature molecular single-electron transistor41 202–204 (1998)
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