Sensing of dynamic charge states using single-electron tunneling transistors

V.A. Krupenin^a, S.V. Lotkhov^a, H. Scherer^b, A.B. Zorin^b, F.-J. Ahlers^b, J. Niemeyer^b, H. Wolf^b
^aLomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
^bPhysikalisch-Technische Bundesanstalt, Braunschweig, Germany

PACS: 73.40.−c, 74.80.Fp
DOI: 10.1070/PU1998v041n02ABEH000365
URL: https://ufn.ru/en/articles/1998/2/ac/
Web of Science

000072729300028
Citation: Krupenin V A, Lotkhov S V, Scherer H, Zorin A B, Ahlers F-J, Niemeyer J, Wolf H "Sensing of dynamic charge states using single-electron tunneling transistors" Phys. Usp. 41 204–206 (1998)

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Оригинал: Крупенин В А, Лотхов С В, Шерер Х, Зорин А Б, Алерс Ф Й, Нимайер Й, Вольф Х «Зондирование динамических зарядовых состояний с помощью одноэлектронных туннельных транзисторов» УФН 168 219–222 (1998); DOI: 10.3367/UFNr.0168.199802ac.0219

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