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Coulomb effects in a ballistic one-channel S-S-S device

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Landau Institute for Theoretical Physics, Russian Academy of Sciences, ul. Kosygina 2, Moscow, 119334, Russian Federation
Fulltext pdf (208 KB)
Fulltext is also available at DOI: 10.1070/PU1998v041n02ABEH000363
PACS: 73.40.−c, 74.80.Fp
DOI: 10.1070/PU1998v041n02ABEH000363
URL: https://ufn.ru/en/articles/1998/2/aa/
000072729300026
Citation: Ivanov D A, Feigel’man M V "Coulomb effects in a ballistic one-channel S-S-S device" Phys. Usp. 41 197–201 (1998)
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Оригинал: Иванов Д А, Фейгельман М В «Кулоновские эффекты в баллистическом одноканальном S-S-S-транзисторе» УФН 168 212–216 (1998); DOI: 10.3367/UFNr.0168.199802aa.0212

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  15. S.A. Tarasenko “Electron properties of topological insulators. The structure of edge states and photogalvanic effects61 1026–1030 (2018)
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  19. A. Frydman, E.P. Price, R.C. Dynes “Mesoscopic phenomena in disordered superconductors41 220–223 (1998)
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