The results of studies of monatomic steps on silicon surfaces using in situ ultrahigh vacuum reflection electron microscopy are reviewed. The topics covered include the increase in dynamic step edge stiffness under non-equilibrium conditions; step bunch and step antibunch formation processes; electromigration effects; the anomalously high density of Si(111) adatoms; and incipient epitaxial growth.

PACS: 68.35.p, 68.55.a, 81.15.Hi DOI: 10.1070/PU1998v041n10ABEH000462 URL: https://ufn.ru/en/articles/1998/10/c/ 000076871800003 Citation: Latyshev A V, Aseev A L "Monatomic steps on silicon surfaces" Phys. Usp. 41 1015–1023 (1998) BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks Оригинал: Латышев А В, Асеев А Л «Моноатомные ступени на поверхности кремния» УФН 168 1117–1127 (1998); DOI: 10.3367/UFNr.0168.199810c.1117