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Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (January 29, 1997)

 a,  b,  b,  b, c, d,  b,  b,  e,  f,  e,  f,  g,  g,  g,  h,  i,  i,  g,  g
a Institut für Festkörperphysik, Technische Universität, Hardenbergstr. 36, Berlin, 10623, Germany
b Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
c Academic University, Khlopina str. 8, korp. 3, St. Petersburg, 194021, Russian Federation
d Vertically Integrated Systems (VI Systems GmbH), Hardenbergstr 7, Berlin, 10623, Germany
e Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
f Prokhorov General Physics Institute of the Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russian Federation
g Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
h Institute of Problems of Microelectronic Technology, Russian Academy of Sciences, Moscow region, Chernogolovka, Russian Federation
i Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation

(1) D Bimberg, I P Ipatova, P S Kop’ev, N N Ledentsov, V G Malyshkin, V A Shchukin (Technische Universitat Berlin, Berlin; A F Ioffe Physicotechnical Institute, RAS, St.-Petersburg) ’Spontaneous ordering of semiconductor nanostructures’; (2) I V Kukushkin (Institute of Solid State Physics, RAS, Chernogolovka, Moscow region) ’Experimental verification of the skyrmion concept’; 3) N A Gippius, V D Kulakovskii, S G Tikhodeev (Institute of General Physics, RAS, Moscow; Institute of Solid State Physics, RAS, Chernogolovka, Moscow region) ’Effect of electric field redistribution on the electronic and optical properties of nanostructures’; (4) V V Kapaev, Yu V Kopaev, I V Tokatly (P N Lebedev Physical Institute, RAS, Moscow) ’Momentum dependence of electron state dimensionality in heterostructures’; (5) V G Lysenko (Institute of Technology Problems for Microelectronics and Highly Purified Materials, RAS, Chernogolovka, Moscow region) ’Bloch oscillations in superlattices’; (6) V A Krupenin, S V Lotkhov, Yu A Pashkin, D E Presnov (M V Lomonosov Moscow State University, Moscow; P N Lebedev Physical Institute, RAS, Moscow) ’An experimental study of charge effects in ultrasmall tunnel junctions’. An abridge version of the five of above reports is given below.

Fulltext pdf (371 KB)
Fulltext is also available at DOI: 10.1070/PU1997v040n05ABEH000239
PACS: 01.10.Fv
DOI: 10.1070/PU1997v040n05ABEH000239
URL: https://ufn.ru/en/articles/1997/5/j/
Citation: Bimberg D, Ipatova I P, Kop’ev P S, Ledentsov N N, Malyshkin V G, Shchukin V A, Kukushkin I V, Gippius N A, Kulakovskii V D, Tikhodeev S G, Kapaev V V, Kopaev Yu V, Tokatly I V, Lysenko V G, Krupenin V A, Lotkhov S V, Pashkin Yu A, Presnov D E "Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (January 29, 1997)" Phys. Usp. 40 529–529 (1997)
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