Low-temperature investigations of surfaces of certain semiconductors

PACS: 68.35.Bs, 68.47.Fg, 68.43.−h, 79.60.Bm, 68.49.Jk, 61.14.Hg (all)
DOI: 10.1070/PU1987v030n08ABEH002949
URL: https://ufn.ru/en/articles/1987/8/o/
Citation: Grazhulis V A "Low-temperature investigations of surfaces of certain semiconductors" Sov. Phys. Usp. 30 745–745 (1987)

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RT Journal
T1 Low-temperature investigations of surfaces of certain semiconductors
A1 Grazhulis,V.A.
PB Physics-Uspekhi
PY 1987
FD 10 Aug, 1987
JF Physics-Uspekhi
JO Phys. Usp.
VO 30
IS 8
SP 745-745
DO 10.1070/PU1987v030n08ABEH002949
LK https://ufn.ru/en/articles/1987/8/o/

Оригинал: Гражулис В А «Низкотемпературные исследования поверхностей некоторых полупроводников» УФН 152 703–704 (1987); DOI: 10.3367/UFNr.0152.198708o.0703