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Issue 11, 2024
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1986

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January

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The twenty-fifth anniversary of the laser


Semiconductor lasers

 a, ,  a
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

Recent advances in the field of semiconductor lasers are treated--injection lasers and lasers excited with fast electrons. Considerable attention is paid to new, four--component heterostructures and ultrathin active layers for injection lasers. Data are given on the fundamental fields of applications of semiconductor lasers.

Fulltext pdf (536 KB)
Fulltext is also available at DOI: 10.1070/PU1986v029n01ABEH003078
PACS: 42.55.Px, 42.60.By, 42.70.Hj, 42.70.Nq (all)
DOI: 10.1070/PU1986v029n01ABEH003078
URL: https://ufn.ru/en/articles/1986/1/c/
Citation: Basov N G, Eliseev P G, Popov Yu M "Semiconductor lasers" Sov. Phys. Usp. 29 20–30 (1986)
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Оригинал: Басов Н Г, Елисеев П Г, Попов Ю М «Полупроводниковые лазеры» УФН 148 35–53 (1986); DOI: 10.3367/UFNr.0148.198601c.0035

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