N.G. Basov^a, P.G. Eliseev, Yu.M. Popov^a
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

Recent advances in the field of semiconductor lasers are treated--injection lasers and lasers excited with fast electrons. Considerable attention is paid to new, four--component heterostructures and ultrathin active layers for injection lasers. Data are given on the fundamental fields of applications of semiconductor lasers.

PACS: 42.55.Px, 42.60.By, 42.70.Hj, 42.70.Nq (all)
DOI: 10.1070/PU1986v029n01ABEH003078
URL: https://ufn.ru/en/articles/1986/1/c/
Citation: Basov N G, Eliseev P G, Popov Yu M "Semiconductor lasers" Sov. Phys. Usp. 29 20–30 (1986)

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Оригинал: Басов Н Г, Елисеев П Г, Попов Ю М «Полупроводниковые лазеры» УФН 148 35–53 (1986); DOI: 10.3367/UFNr.0148.198601c.0035