Issues

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1975

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November

  

Reviews of topical problems


Ferromagnetic and antiferromagnetic semiconductors


Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences, Kaluzhskoe shosse 14, Troitsk, Moscow, 108840, Russian Federation

A review is given of the experimental and theoretical data on ferromagnetic and antiferromagnetic semiconductors. Information on the magnetic, electrical, and optical properties is analyzed systematically. The main theoretical ideas on the physics of magnetic semiconductors are given without detailed proof and are used in the interpretation of the experimental results relating to the influence of the magnetic order on the electrical and optical properties of magnetic semiconductors and to the influence of conduction electrons on the magnetic order.

Fulltext pdf (1.5 MB)
Fulltext is also available at DOI: 10.1070/PU1975v018n11ABEH005234
PACS: 77.20.My, 75.25.+z, 78.20.Ls (all)
DOI: 10.1070/PU1975v018n11ABEH005234
URL: https://ufn.ru/en/articles/1975/11/b/
Citation: Nagaev É L "Ferromagnetic and antiferromagnetic semiconductors" Sov. Phys. Usp. 18 863–892 (1975)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Ferromagnetic and antiferromagnetic semiconductors
A1 Nagaev,É.L.
PB Physics-Uspekhi
PY 1975
FD 10 Nov, 1975
JF Physics-Uspekhi
JO Phys. Usp.
VO 18
IS 11
SP 863-892
DO 10.1070/PU1975v018n11ABEH005234
LK https://ufn.ru/en/articles/1975/11/b/

Оригинал: Нагаев Э Л «Ферромагнитные и антиферромагнитные полупроводники» УФН 117 437–492 (1975); DOI: 10.3367/UFNr.0117.197511b.0437

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