Ferromagnetic and antiferromagnetic semiconductors

É.L. Nagaev
Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences, Kaluzhskoe shosse 14, Troitsk, Moscow, 108840, Russian Federation

A review is given of the experimental and theoretical data on ferromagnetic and antiferromagnetic semiconductors. Information on the magnetic, electrical, and optical properties is analyzed systematically. The main theoretical ideas on the physics of magnetic semiconductors are given without detailed proof and are used in the interpretation of the experimental results relating to the influence of the magnetic order on the electrical and optical properties of magnetic semiconductors and to the influence of conduction electrons on the magnetic order.

PACS: 77.20.My, 75.25.+z, 78.20.Ls (all)
DOI: 10.1070/PU1975v018n11ABEH005234
URL: https://ufn.ru/en/articles/1975/11/b/
Citation: Nagaev É L "Ferromagnetic and antiferromagnetic semiconductors" Sov. Phys. Usp. 18 863–892 (1975)

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PT Journal Article
TI Ferromagnetic and antiferromagnetic semiconductors
AU Nagaev É L
FAU Nagaev &L
DP 10 Nov, 1975
TA Phys. Usp.
VI 18
IP 11
PG 863-892
RX 10.1070/PU1975v018n11ABEH005234
URL https://ufn.ru/en/articles/1975/11/b/
SO Phys. Usp. 1975 Nov 10;18(11):863-892

Оригинал: Нагаев Э Л «Ферромагнитные и антиферромагнитные полупроводники» УФН 117 437–492 (1975); DOI: 10.3367/UFNr.0117.197511b.0437