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Оптические свойства графена и полупроводников типа A4B6


Институт теоретической физики им. Л.Д. Ландау РАН, ул. Косыгина 2, Москва, 119334, Российская Федерация

Рассмотрена частотная дисперсия динамической проводимости графена, многослойной системы графеновых слоев и полупроводников A4B6 в зависимости от температуры и концентрации носителей в области частот бóльших, чем частота релаксации носителей, но малых по сравнению с шириной зоны проводимости. Узкая запрещенная зона и линейность электронного спектра — общая черта этих материалов — приводят к особенности у диэлектрической проницаемости (логарифмической в вещественной части и конечному скачку в мнимой) на пороге прямых межзонных переходов и, соответственно, к аномально большой величине диэлектрической постоянной у полупроводников A4B6. Рассчитанные и измеренные значения диэлектрических констант находятся в очень хорошем согласии друг с другом. Коэффициент прохождения через графен в оптическом диапазоне не зависит от частоты, а его отличие от единицы дает значение постоянной тонкой структуры. Различие в размерности, равной трем у полупроводников и двум у графена, выражается в различном характере плазмонов, а также электромагнитных волн, которые могут существовать при высоком допировании (или в условиях эффекта поля) вблизи порога поглощения.

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English fulltext is available at DOI: 10.1070/PU2008v051n09ABEH006625
PACS: 71.20.Nr, 78.20.Bh, 78.20.Ci, 78.66.Tr (все)
DOI: 10.3367/UFNr.0178.200809b.0923
URL: https://ufn.ru/ru/articles/2008/9/b/
000262359700002
2-s2.0-58449105705
2008PhyU...51..887F
Цитата: Фальковский Л А "Оптические свойства графена и полупроводников типа A4B6" УФН 178 923–934 (2008)
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English citation: Falkovsky L A “Optical properties of graphene and IV — VI semiconductors” Phys. Usp. 51 887–897 (2008); DOI: 10.1070/PU2008v051n09ABEH006625

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