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Динамика заряженных частиц высоких энергий в прямых и изогнутых кристаллах

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Национальный научный центр «Харьковский физико-технический институт», ул. Академическая 1, Харьков, 310108, Украина

Исследуются проблемы динамики заряженных частиц высоких энергий в прямых и изогнутых кристаллах. Рассматриваются различные методы описания рассеяния частиц в кристаллах: борновское приближение, классическая электродинамика, эйкональное приближение. Исследуемые проблемы относятся к теории нелинейных систем, в которых возможны как регулярный, так и хаотический режимы движения. Рассматриваются различные режимы движения при каналировании и при надбарьерном движении частиц в кристалле вдоль одной из кристаллографических осей. Особое внимание уделяется изучению движения частиц в изогнутом кристалле, который может быть использован для поворотов пучков частиц высоких энергий.

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English fulltext is available at DOI: 10.1070/PU1995v038n10ABEH000114
PACS: 61.80.Az, 61.80.Mk, 05.45.+b
DOI: 10.3367/UFNr.0165.199510c.1165
URL: https://ufn.ru/ru/articles/1995/10/c/
A1995TF63500003
Цитата: Ахиезер А И, Шульга Н Ф, Трутень В И, Гриненко А А, Сыщенко В В "Динамика заряженных частиц высоких энергий в прямых и изогнутых кристаллах" УФН 165 1165–1192 (1995)
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English citation: Akhiezer A I, Shul’ga N F, Truten’ V I, Grinenko A A, Syshchenko V V “Dynamics of high-energy charged particles in straight and bent crystals” Phys. Usp. 38 1119–1145 (1995); DOI: 10.1070/PU1995v038n10ABEH000114

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