V.A. Gritsenko



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Phone: +7 (383) 333 27 66
Fax: +7 (383) 333 27 71
Website:


Articles

  1. T.V. Perevalov, V.A. Gritsenko “Application and electronic structure of high-permittivity dielectricsPhys. Usp. 53 561–575 (2010)

See also: T.V. Perevalov

PACS: 71.15.Mb, 77.55.D-, 85.30.-z

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions