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Issue 12, 2024
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T.V. Perevalov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address:
prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
Phone:
+7 (383) 333 27 66
Fax:
+7 (383) 333 27 71
Website:
www.isp.nsc.ru
Articles
T.V. Perevalov, V.A. Gritsenko “
Application and electronic structure of high-permittivity dielectrics
”
Phys. Usp.
53
561–575 (2010)
See also:
V.A. Gritsenko
PACS:
71.15.Mb
,
77.55.D-
,
85.30.-z
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