V.A. Tkachenko



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation


Articles

  1. Z.D. Kvon, L.V. Litvin, V.A. Tkachenko, A.L. Aseev “One-electron transistors based on Coulomb blockade and quantum interferencePhys. Usp. 42 402–405 (1999)

See also: Z.D. Kvon, L.V. Litvin, A.L. Aseev

PACS: 73.23.Hb

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