Localized excitons and trions in semiconductor nanosystems
R.A. Suris Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
Optical properties of semiconductors and semiconductor nanoheterostructures in the vicinity of fundamental absorption are determined by electron-hole complexes, such as excitons and three-particle charged complexes (trions). In the review are presented the results of theoretical studies of localized excitons and trions in the framework of the variational method. The presented approach is applicable to a wide range of semiconductor structures: from quantum wells, wires and dots based on classical III-V and II-VI semiconductors to van der Waals heterostructures based on transitional metal dichalcogenides monolayers. Additionally, many-particle effects taking place in doped structures. Discussed theoretical methods are illustrated by experimental results, widely presented in literature.
Keywords: exciton, trion, binding energy, wave function, localization, quantum well, transitional metal dichalcogenides monolayers, optical spectra PACS:78.67.−n, 78.67.De, 78.20.Bh, 78.30.Fs, 78.66.Li (all) DOI:10.3367/UFNe.2020.11.038867 Citation: Semina M A, Suris R A "Localized excitons and trions in semiconductor nanosystems" Phys. Usp., accepted
Received: 18th, August 2020, revised: 14th, November 2020, accepted: 18th, November 2020