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Investigation of semiconductors with defects using Raman scattering


Landau Institute for Theoretical Physics, Russian Academy of Sciences, ul. Kosygina 2, Moscow, 119334, Russian Federation

The influence of defects and carriers on lattice dynamics, especially on Raman scattering from semiconductors and metals, is considered; a comparison of the theory with experimental data is made. Phonon scattering by point, line, and plane defects produces a phonon shift and phonon broadening, which influence the Raman line shape. This effect is used for investigating strain at interfaces and for characterizing semiconductor devices. Phonon interaction with carriers involves a Coulomb field excited by optical-phonon vibrations. Our treatment of the electron-phonon interaction is based on the Born-Oppenheimer adiabatic approximation. The effect of carriers is essential near the edge of the ω-k region where Landau damping appears due to the electron-hole excitation. A possibility to determine the electron-phonon coupling constant from experiments with the phonon-plasmon coupled modes is discussed.

Fulltext pdf (854 KB)
Fulltext is also available at DOI: 10.1070/PU2004v047n03ABEH001735
PACS: 63.20.−e, 63.20.Dj, 78.30.−j (all)
DOI: 10.1070/PU2004v047n03ABEH001735
URL: https://ufn.ru/en/articles/2004/3/b/
000223338900002
2004PhyU...47..249F
Citation: Falkovsky L A "Investigation of semiconductors with defects using Raman scattering" Phys. Usp. 47 249–272 (2004)
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Оригинал: Фальковский Л А «Исследования полупроводников с дефектами методом комбинационного (рамановского) рассеяния света» УФН 174 259–283 (2004); DOI: 10.3367/UFNr.0174.200403b.0259

References (92) ↓ Cited by (16) Similar articles (20)

  1. Klemens P G Phys. Rev. 148 845 (1966)
  2. Debernardi A, Baroni S, Molinari E Phys. Rev. Lett. 75 1819 (1995)
  3. Barker A S (Jr), Sievers A J Rev. Mod. Phys. 47 (Suppl. 2) S1 (1975)
  4. Taylor D W In Dynamical Properties Of Solids Vol. 2 Crystalline Solids, Applications (Eds G K Horton, A A Maradudin) (Amsterdam: North-Holland Publ. Co., 1975) p. 285
  5. Klein M V In Dynamical Properties Of Solids Vol. 6 The Modern Physics Of Phonons (Eds G K Horton, A A Maradudin) (Amsterdam: North-Holland Publ. Co., 1990) p. 65
  6. Plekhanov V G Usp. Fiz. Nauk 173 711 (2003); Plekhanov V G Phys. Usp. 46 689 (2003)
  7. Cardona M, Ruf T Solid State Commun. 117 201 (2001)
  8. Cerdeira F et al. Phys. Rev. B 5 580 (1972)
  9. Merle P et al. Phys. Rev. B 21 1617 (1980)
  10. Feng Z C, Choyke W J, Powell J A J. Appl. Phys. 64 6827 (1988)
  11. Weinstein B A, Zallen R In Light Scattering In Solids IV: Electronic Scattering, Spin Effects, SERS, And Morphic Effects (Topics In Applied Physics, Vol. 54, Eds M Cardona, G Güntherodt) (Berlin: Springer-Verlag, 1984) p. 463
  12. Yakovenko E V, Goncharov A F, Stishov S M High Pressure Research 7 433 (1991)
  13. Ulrich C et al. Phys. Rev. Lett. 78 1283 (1997)
  14. Yakovenko E V, Gauthier M, Polian A Zh. Eksp. Teor. Fiz. (2004), v pechati
  15. Tiong K K et al. Appl. Phys. Lett. 44 122 (1984)
  16. Richter H, Wang Z P, Ley L Solid State Commun. 39 625 (1981)
  17. Campbell I H, Fauchet P M Solid State Commun. 58 739 (1986)
  18. Tamura S Phys. Rev. B 30 849 (1984)
  19. Göbel A et al. Phys. Rev. B 59 2749 (1999)
  20. Ager J W III, Veirs D K, Rosenblatt G M Phys. Rev. B 43 6491 (1991)
  21. Wagner J et al. Phys. Rev. B 40 1817 (1989)
  22. Schwoerer-Böhning M, Macrander A T, Arms D A Phys. Rev. Lett. 80 5572 (1998)
  23. Falkovsky L A Pis’ma ZhETF 66 817 (1997)
  24. Camassel J, Contreras S, Robert J L C.R. Acad. Sci. Ser. IV 1 5 (2000)
  25. Falkovsky L A, Bluet J M, Camassel J Phys. Rev. B 55 R14697 (1997)
  26. Falkovsky L A, Bluet J M, Camassel J Phys. Rev. B 57 11283 (1998)
  27. Cree Research Inc., http://cree.com/
  28. Camassel J et al. Electron. Lett. 35 1284 (1999)
  29. Camassel J, Falkovsky L A, Planes N Phys. Rev. B 63 035309 (2001)
  30. "Silicon-on-insulator technology" MRS Bulletin 23 (12) (1998)
  31. Tong Q-Y, Gösele U Semiconductor Wafer Bonding: Science And Technology (The Electrochemical Soc. Series) (New York: John Wiley, 1999)
  32. Bruel M Electron. Lett. 58 1284 (1999)
  33. Letavic T J et al. In Proc. Of The 1st Intern. Symp. On Semiconductor Wafer Bonding: Science, Technology And Applications, Phoenix, Ariz., USA, 1991 (Proc. Electrochemical Soc., Vol. 92-7, Eds U Gösele) (Pennington, NJ: Electrochemical Soc., 1992) p. 397
  34. Schwarz K W Phys. Rev. Lett. 78 4785 (1997)
  35. Gillard V T, Nix W D, Freund L B J. Appl. Phys. 76 7280 (1994)
  36. Romanov A E et al. J. Appl. Phys. 85 182 (1999)
  37. Charpenay S et al. in Proc. of the 1998 IEEE Intern. SOI Conf. (1998) p. 43
  38. Scott J F, Porto S P S Phys. Rev. 161 903 (1967)
  39. Kleinman D A, Spitzer W G Phys. Rev. 125 16 (1962)
  40. Jayaraman A, Wood D L, Maines R G (Sr) Phys. Rev. B 35 8316 (1987)
  41. Camassel J, Goullet A, Pascual J Phys. Rev. B 38 8419 (1988)
  42. Kirk C T Phys. Rev. B 38 1255 (1988)
  43. Kamitsos E I, Patsis A P, Kordas G Phys. Rev. B 48 12499 (1993)
  44. Lifshits I M Zh. Eksp. Teor. Fiz. 17 1017 (1947); Lifshitz I M Nuovo Cimento 3 (Suppl.) 716 (1956); Lifshits I M Usp. Fiz. Nauk 83 617 (1964); Lifshitz I M Sov. Phys. Usp. 7 549 (1965)
  45. Böttger H Principles Of The Theory Of Lattice Dynamics (Weinheim: Physik-Verlag, 1983), Ch. 2
  46. Lifshits I M, Gredeskul S A, Pastur L A Introduction To The Theory Of Disordered Systems (New York: Wiley, 1988)
  47. Rohmfeld S, Hundhausen M, Ley L Phys. Rev. B 58 9858 (1998)
  48. Nakashima S et al. Appl. Phys. Lett. 77 3612 (2000)
  49. Falkovsky L A Phys. Rev. B 64 024301 (2001)
  50. Born M, Kun’ Kh Dinamicheskaya Teoriya Kristallicheskikh Reshetok (M.: IL, 1958), Gl. 2, 5
  51. Vaks V G Vvedenie v Mikroskopicheskuyu Teoriyu Segnetoelektrikov (M.: Nauka, 1973), Gl. 6
  52. Grille H, Schnittler Ch, Bechstedt F Phys. Rev. B 61 6091 (2000)
  53. Bungaro C, Rapcewicz K, Bernholc J Phys. Rev. B 61 6720 (2000)
  54. Falkovsky L A Zh. Eksp. Teor. Fiz. 119 966 (2001)
  55. Feldman D W et al. Phys. Rev. 170 698 (1968); Feldman D W et al. Phys. Rev. 173 787 (1968)
  56. Fal’kovskii L A Pis’ma ZhETF 69 247 (1999)
  57. Loudon R Adv. Phys. 13 423 (1964)
  58. Harima H, Nakashima S, Uemura T J. Appl. Phys. 78 1996 (1995)
  59. Olego D, Cardona M Phys. Rev. B 23 6592 (1981)
  60. Feldman D W, Parker J H (Jr), Ashkin M Phys. Rev. Lett. 21 607 (1968)
  61. Bolotin G A, Ponosov Yu S Fiz. Tverd. Tela 27 2636 (1985); Bolotin G A, Ponosov Yu S Fiz. Tverd. Tela 30 986 (1988)
  62. Cardona M, Ipatova I P In Elementary Excitations In Solids (Eds J L Birman, C Sébenne, R F Wallis) (Amsterdam: North-Holland, 1992) p. 264, Ch. 13
  63. d’Astuto M et al. Phys. Rev. Lett. 88 167002 (2002); d’Astuto M et al. cond-mat/0201501
  64. Migdal A B Zh. Eksp. Teor. Fiz. 34 1438 (1958)
  65. Abrikosov A A, Gor’kov L P, Dzyaloshinskii I E Metody Kvantovoi Teorii Polya v Statisticheskoi Fizike 2-e Izd. (M.: Dobrosvet, 1998) p. 277
  66. Brovman E G, Kagan Yu Zh. Eksp. Teor. Fiz. 52 557 (1967)
  67. Kontorovich V M Usp. Fiz. Nauk 142 265 (1984); Kontorovich V M Sov. Phys. Usp. 27 134 (1984)
  68. Engelsberg S, Schrieffer J R Phys. Rev. 131 993 (1963)
  69. Alexandrov A S, Schrieffer J R Phys. Rev. B 56 13731 (1997)
  70. Maksimov E G, Shulga S V Solid State Commun. 97 553 (1996)
  71. Reizer M Phys. Rev. B 61 40 (2000)
  72. Gurevich V L, Larkin A I, Firsov Yu A Fiz. Tverd. Tela 4 185 (1962)
  73. Ipatova I P, Subashiev A V Zh. Eksp. Teor. Fiz. 66 722 (1974)
  74. Ponosov Yu S et al. Phys. Status Solidi B 208 257 (1998)
  75. Abstreiter G, Cardona M, Pinczuk A Light Scattering In Solids IV: Electronic Scattering, Spin Effects, SERS, And Morphic Effects (Topics In Applied Physics, Vol. 54, Eds M Cardona, G Güntherodt) (Berlin: Springer-Verlag, 1984) p. 5
  76. Falkovsky L A Zh. Eksp. Teor. Fiz. 124 886 (2003)
  77. Mermin N D Phys. Rev. B 1 2362 (1970)
  78. Falkovsky L A, Mishchenko E G Phys. Rev. B 51 7239 (1995)
  79. Falkovsky L A, Klama S Physica C 264 1 (1996)
  80. Falkovsky L A Phys. Rev. B 66 020302(R) (2002); Fal’kovskii L A Zh. Eksp. Teor. Fiz. 122 411 (2002)
  81. Landau L D, Lifshits E M Fizicheskaya Kinetika (M.: Fizmatlit, 2001)
  82. Gantmakher V F, Levinson I B Rasseyanie Nositelei Toka v Metallakh i Poluprovodnikakh (M.: Nauka, 1984)
  83. Abrikosov A A, Falkovskii L A Zh. Eksp. Teor. Fiz. 40 262 (1961)
  84. Abrikosov A A, Genkin V M Zh. Eksp. Teor. Fiz. 65 842 (1974)
  85. Zawadowski A, Cardona M Phys. Rev. B 42 10732 (1990)
  86. Fano U Phys. Rev. 124 1866 (1961)
  87. Hon D T, Faust W L Appl. Phys. 1 241 (1973)
  88. Artús L et al. Phys. Rev. B 60 5456 (1999)
  89. Fukasawa R, Perkowitz S Phys. Rev. B 50 14119 (1994)
  90. Perlin P et al. Phys. Rev. B 45 83 (1992)
  91. Perlin P et al. Phys. Status Solidi B 198 223 (1996)
  92. Falkovsky L A et al. Phys. Rev. B 57 11349 (1998)
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